GT100LA120UX 반도체 회로 부품 판매점
IGBT
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 Vishay Siliconix |
www.DataSheet.co.kr
GT100LA120UX
Vishay Semiconductors
"Low Side Chopper" IGBT SOT-227
(Trench IGBT), 100 A
SOT-227
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 100 A, 25 °C
1200 V
100 A at 71 °C
2.36 V
FEATURES
• Trench IGBT technology
• Very low VCE(on)
• Square RBSOA
• HEXFRED® clamping diode
• 10 μs short circuit capability
• Fully isolated package
• Speed 4 kHz to 30 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Gate to emitter voltage
VGE
Power dissipation, IGBT
PD
Power dissipation, diode
RMS isolation voltage
PD
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
1200
134
92
270
270
87
59
± 20
463
260
338
190
2500
UNITS
V
A
V
W
V
Document Number: 93099 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
GT100LA120UX
Vishay Semiconductors "Low Side Chopper" IGBT SOT-227
(Trench IGBT), 100 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown
voltage
VBR(CES) VGE = 0 V, IC = 1 mA
VGE = 15 V, IC = 50 A
Collector to emitter voltage
VCE(on)
VGE = 15 V, IC = 100 A
VGE = 15 V, IC = 50 A, TJ = 125 °C
VGE = 15 V, IC = 100 A, TJ = 125 °C
Gate threshold voltage
Temperature coefficient of
threshold voltage
VGE(th)
VCE = VGE, IC = 500 μA
VGE(th)/TJ VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Collector to emitter leakage current
ICES
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
Diode reverse breakdown voltage
VBR IR = 1 mA
IC = 50 A, VGE = 0 V
Diode forward voltage drop
VFM
IC = 100 A, VGE = 0 V
IC = 50 A, VGE = 0 V, TJ = 125 °C
IC = 100 A, VGE = 0 V, TJ = 125 °C
Diode reverse leakage current
IRM
VR = VR rated
TJ = 125 °C, VR = VR rated
Gate to emitter leakage current
IGES
VGE = ± 20 V
MIN.
1200
-
-
-
-
5
-
-
-
1200
-
-
-
-
-
-
-
TYP.
-
1.79
2.36
2.05
2.8
5.8
- 15.6
0.5
0.052
-
2.53
3.32
2.66
3.70
4
0.6
-
MAX.
-
2.33
2.85
2.62
3.42
7
-
100
2
-
3.55
4.35
3.70
4.50
50
3
± 200
UNITS
V
mV/°C
μA
mA
V
V
μA
mA
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Short circuit safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Qg
Qge
Qgc
Eon
Eoff
Etot
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
RBSOA
SCSOA
trr
Irr
Qrr
trr
Irr
Qrr
IC = 100 A, VCC = 600 V, VGE = 15 V
IC = 100 A, VCC = 600 V,
VGE = 15 V, Rg = 5
L = 500 μH, TJ = 25 °C
IC = 100 A, VCC = 600 V,
VGE = 15 V, Rg = 5
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
TJ = 150 °C, IC = 270 A, Rg = 22
VGE = 15 V to 0 V, VCC = 900 V,
VP = 1200 V
TJ = 150 °C, Rg = 22
VGE = 15 V to 0 V, VCC = 900 V,
VP = 1200 V
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
IF = 50 A, dIF/dt = 200 A/μs,
VR = 200 V, TJ = 125 °C
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
400
120
170
21.9
5.48
27.38
23.6
7.65
31.25
195
259
188
212
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
10
- 129 161
- 11 14
- 700 1046
- 208 257
- 17 21
-
1768
2698
UNITS
nC
mJ
ns
μs
ns
A
nC
ns
A
nC
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 93099
Revision: 22-Jul-10
Datasheet pdf - http://www.DataSheet4U.net/
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GT100LA120UX igbt
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