파트넘버.co.kr IXA12IF1200PC 데이터시트 PDF


IXA12IF1200PC 반도체 회로 부품 판매점

XPT IGBT



IXYS 로고
IXYS
IXA12IF1200PC 데이터시트, 핀배열, 회로
XPT IGBT
Copack
IXA12IF1200PC
preliminary
I C25 =
VCES
=
V =CE(sat)typ
20 A
1200 V
1.8 V
Part number
IXA12IF1200PC
C (2)
(G) 1
Features / Advantages:
Easy paralleling due to the positive temperature
coefficient of the on-state voltage
Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
E (3)
Applications:
AC motor drives
Solar inverter
Medical equipment
Uninterruptible power supply
Air-conditioning systems
Welding equipment
Switched-mode and resonant-mode
power supplies
Inductive heating, cookers
Package:
Housing: TO-263 (D2Pak)
rIndustry standard outline
rEpoxy meets UL 94V-0
rRoHS compliant
IGBT
Symbol
VCES
VGES
IC25
I C90
Ptot
I CES
Definition
Collector emitter voltage
Maximum DC gate voltage
Collector current
Total power dissipation
Collector emitter leakage current
I GES
VCE(sat)
Gate emitter leakage current
Collector emitter saturation voltage
VGE(th)
Q Gon
t d(on)
tr
t d(off)
tf
Eon
Eoff
RBSOA
Gate emitter threshold voltage
Total gate charge
Turn-on delay time
Current rise time
Turn-off delay time
Current fall time
Turn-on energy per pulse
Turn-off energy per pulse
Reverse bias safe operation area
www.DSaCtaSSOheAet4US.choomrt circuit safe operation area
tSC Short circuit duration
I SC
RthJC
Short circuit current
Thermal resistance juntion to case
Conditions
VGE = 0 V
TVJ = 25°C
TVJ = 25°C
TC = 25°C
TC = 90°C
VCE = VCES ; VGE = 0 V
TVJ = 25°C
TVJ = 25°C
TVJ = 125 °C
VCE = 0 V; VGE = ±20 V
IC = 9 A; VGE = 15 V
IC = 0.3 mA; VGE = VCE
TVJ = 25°C
TVJ = 125 °C
VCE = 600 V; VGE = 15 V; IC = 10 A
Inductive load
VCE = 600 V; IC = 10 A
VGE = ±15 V; RG= 100 Ω
VGE = 15 V; RG = 100 Ω
VCEK = 1200 V
TVJ = 125 °C
TVJ = 125°C
Ratings
min. typ. max.
1200
±20
20
13
85
0.1
0.1
500
1.8 2.1
2.1
5.5 6 6.5
27
70
40
250
100
1.1
1.1
30
Unit
V
V
A
A
W
mA
mA
nA
V
V
V
nC
ns
ns
ns
ns
mJ
mJ
A
VCE = 900 V; VGE= ±15 V
RG = 100 Ω ; non-repetitive
TVJ = 125°C
10 µs
40 A
1.5 K/W
IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20090409


IXA12IF1200PC 데이터시트, 핀배열, 회로
Diode
Symbol
I F25
IF 90
VF
Definition
Forward current
Forward voltage
Qrr
I RM
trr
Erec(off)
RthJC
Reverse recovery charge
Maximum reverse recovery current
Reverse recovery time
Reverse recovery losses at turn-off
Thermal resistance juntion to case
Conditions
TC = 25°C
TC = 90°C
IF = 10 A
VR = 600V;
diF /dt = -
IF = 10 A
A/µs;
Equivalent Circuits for Simmulation
I
V0
R0
Symbol
V0
R0
V0
R0
Definition
IGBT
Diode
R1
C1
R2
C2
R3
C3
R4
C4
R1
R2
R3
R4
τ1
τ2
τ3
τ4
www.DataSheet4U.com
IXA12IF1200PC
preliminary
TVJ = 25°C
TVJ = 125 °C
TVJ = 125 °C
Ratings
min. typ. max.
22
14
1.95 2.2
1.85
tbd
tbd
tbd
tbd
1.8
UnVit
A
A
V
V
µC
A
ns
mJ
K/W
TVJ = 150 °C
TVJ = 150 °C
Ratings
min. typ. max.
1.1
153
1.1
90
Unit
V
mΩ
V
mΩ
IGBT
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
Diode
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20090409




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