|
|
Número de pieza | RJH60F6DPK | |
Descripción | Silicon N Channel IGBT High Speed Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RJH60F6DPK (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Preliminary Datasheet
RJH60F6DPK
Silicon N Channel IGBT
High Speed Power Switching
REJ03G1940-0100
Rev.1.00
Jun 18, 2010
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 95 ns typ. (at IC = 30 A, Resistive Load, VCC = 300 V, VGE = 15 V, Rg = 5 , Ta = 25°C)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
1
23
1. Gate
2. Collector
G 3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF(peak) Note2
PC
j-c
j-c
Tj
Tstg
Ratings
600
±30
85
45
170
100
297.6
0.42
2.0
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
REJ03G1940-0100 Rev.1.00
Jun 18, 2010
www.DataSheet.in
Page 1 of 6
1 page RJH60F6DPK
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
Tc = 25°C
Preliminary
1 D=1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
1 shot pulse
0.01
10 μ
100 μ
θj – c(t) = γs (t) • θj – c
θj – c = 0.42°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
10
Tc = 25°C
D=1
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
1 shot pulse
0.01
10 μ
100 μ
θj – c(t) = γs (t) • θj – c
θj – c = 2°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Ic Monitor
Vin Monitor
RL
Rg
Vin = 15 V
D.U.T.
VCC
Waveform
90%
Vin 10%
90%
90%
Ic
td(on)
10%
tr
ton
td(off)
toff
10%
tf
REJ03G1940-0100 Rev.1.00
Jun 18, 2010
www.DataSheet.in
Page 5 of 6
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet RJH60F6DPK.PDF ] |
Número de pieza | Descripción | Fabricantes |
RJH60F6DPK | Silicon N Channel IGBT High Speed Power Switching | Renesas Technology |
RJH60F6DPQ-A0 | High Speed Power Switching | Renesas |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |