파트넘버.co.kr K75T60 데이터시트 PDF


K75T60 반도체 회로 부품 판매점

IGBT



Infineon Technologies 로고
Infineon Technologies
K75T60 데이터시트, 핀배열, 회로
IKW75N60T
TRENCHSTOPSeries
q
Low Loss DuoPack : IGBT in TRENCHSTOPand Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Positive temperature coefficient in VCE(sat)
very tight parameter distribution
high ruggedness, temperature stable behaviour
very high switching speed
Low EMI
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Frequency Converters
Uninterrupted Power Supply
C
G
E
PG-TO247-3
Type
IKW75N60T
VCE
600V
IC
75A
VCE(sat),Tj=25°C
1.5V
Tj,max
175C
Marking
K75T60
Package
PG-TO247-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1µs
Diode forward current, limited by Tjmax
Diode pulsed current, tp limited by Tjmax
TC = 25C
TC = 100C
Gate-emitter voltage
Short circuit withstand time3)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Tsold
Value
600
802)
75
225
225
802)
75
225
20
5
428
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1) J-STD-020 and JESD-022
2) Value limited by bondwire
3) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.8 2013-12-05


K75T60 데이터시트, 핀배열, 회로
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
IKW75N60T
TRENCHSTOPSeries
q
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
0.35
0.6
40
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=0.2mA
VGE = 15V, IC=75A
Tj=25C
Tj=175C
VGE=0V, IF=75A
Tj=25C
Tj=175C
IC=1.2mA,VCE=VGE
VCE=600V,
VGE=0V
Tj=25C
Tj=175C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=75A
min.
600
-
-
-
-
4.1
-
-
-
-
Value
Typ.
-
1.5
1.9
1.65
1.6
4.9
-
-
-
41
-
Unit
max.
-V
2.0
-
2.0
-
5.7
µA
40
5000
100
-
nA
S
Ω
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
Short circuit collector current
Allowed number of short circuits: <1000; time
between short circuits: >1s.
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=75A
VGE=15V
VGE=15V,tSC5s
VCC = 400V,
T j 150C
-
-
-
-
-
-
4620
288
137
470
13
690
- pF
-
-
- nC
- nH
-A
IFAG IPC TD VLS
2
Rev. 2.8 2013-12-05




PDF 파일 내의 페이지 : 총 13 페이지

제조업체: Infineon Technologies

( infineon )

K75T60 igbt

데이터시트 다운로드
:

[ K75T60.PDF ]

[ K75T60 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


K75T60

IGBT - Infineon Technologies