파트넘버.co.kr RJH60D2DPP-M0 데이터시트 PDF


RJH60D2DPP-M0 반도체 회로 부품 판매점

Silicon N Channel IGBT



Renesas Technology 로고
Renesas Technology
RJH60D2DPP-M0 데이터시트, 핀배열, 회로
RJH60D2DPP-M0
Silicon N Channel IGBT
Application: Inverter
Features
High breakdown-voltage
Low on-voltage
Built-in diode
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
C
Preliminary
www.DataSheet4U.com
REJ03G1841-0100
Rev.1.00
Oct 14, 2009
1
23
1. Gate
2. Collector
G 3. Emitter
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW 10 μs, duty cycle 1%
2. Value at Tc = 25°C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
iDF
iDF(peak) Note1
PC Note2
θj-c Note2
Tj
Tstg
Ratings
600
±30
20
10
40
10
40
22.5
5.5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C
°C
REJ03G1841-0100 Rev.1.00 Oct 14, 2009
Page 1 of 3


RJH60D2DPP-M0 데이터시트, 핀배열, 회로
RJH60D2DPP-M0
Electrical Characteristics
Item
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Symbol
ICES / IR
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Min
4.0
Typ
1.6
1.8
430
35
15
19.1
3.0
9.0
30
30
50
90
Max
100
±1
6.0
2.2
Preliminary
Unit
μA
www.DataSheet4U.com
(Ta = 25°C)
Test Conditions
VCE = 600 V, VGE = 0
μA VGE = ±30 V, VCE = 0
V VCE = 10 V, IC = 1 mA
V IC = 10 A, VGE = 15 V Note3
V IC = 20 A, VGE = 15 V Note3
pF VCE = 25 V
pF VGE = 0
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 300 V
nC IC = 10A
ns IC = 10 A
ns RL = 30 Ω
ns VGE = 15 V
ns Rg = 5 Ω
FRD Forward voltage
FRD reverse recovery time
Notes: 3. Pulse test.
4. Under development
VF — 1.8 2.3 V IF = 10 A Note3
trr — 100 — ns IF = 10 A
diF/dt = 100 A/μs
— The specifications potentially be changed without notice.
REJ03G1841-0100 Rev.1.00 Oct 14, 2009
Page 2 of 3




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: Renesas Technology

( renesas )

RJH60D2DPP-M0 igbt

데이터시트 다운로드
:

[ RJH60D2DPP-M0.PDF ]

[ RJH60D2DPP-M0 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


RJH60D2DPP-M0

Silicon N Channel IGBT - Renesas Technology