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PDF FGA70N30T Data sheet ( Hoja de datos )
| Número de pieza | FGA70N30T | |
| Descripción | 70A PDP IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGA70N30T
300V, 70A PDP IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =1.5V @ IC = 40A
• High input impedance
• Fast switching
• RoHS complaint
Application
. PDP System
December 2007
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new sesries
of trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
C
GCE
TO-3P
Absolute Maximum Ratings
Symbol
Description
VCES
Collector-Emitter Voltage
VGES
Gate-Emitter Voltage
IC pulse(1)*
Pulsed Collector Current
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Maximum Power Dissipation
PD Maximum Power Dissipation
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
TJ Operating Junction Temperature
Tstg Storage Temperature Range
Maximum Lead Temp. for soldering
TL Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Notes:
(1)Repetitive test , pluse width = 100usec , Duty = 0.2
* Ic_pluse limited by max Tj
G
E
Ratings
300
±30
160
201
90.6
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
0.62
40
Units
V
V
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2006 Fairchild Semiconductor Corporation
FGA70N30T Rev. A
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 13. Turn-on Characteristics vs.
Collector Current
500
Common Emitter
VGE = 15V, RG = 15Ω
TC = 25oC
TC = 125oC
tr
100
td(on)
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
Common Emitter
VGE = 15V, RG = 15Ω
TC = 25oC
TC = 125oC
tf
td(off)
tf
10
0 20 40 60 80 100
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
2000
1000
Eoff
100
0
20 40 60 80
Collector Current, IC [A]
100
Figure 16. Switching Loss vs. Collector Current
10000
1000
Common Emitter
VGE = 15V, RG = 15Ω
TC = 25oC
TC = 125oC
100 Eon
10
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Common Emitter
VCC = 200V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
20 40 60 80
Gate Resistance, RG [Ω]
100
100
Eon
Eoff
10
0
20 40 60 80
Collector Current, IC [A]
Figure 17. Transient Thermal Impedance of IGBT
1
100
0.5
0.1 0.2
0.1
0.05
0.01
0.02
0.01
1E-3
1E-5
single pulse
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
PDM
t1
t2
1
10
5 www.fairchildsemi.com
FGA70N30T Rev. A
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FGA70N30T.PDF ] | |
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