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IGW08T120 반도체 회로 부품 판매점

Low Loss IGBT



Infineon Technologies 로고
Infineon Technologies
IGW08T120 데이터시트, 핀배열, 회로
Preliminary
TrenchStoP Series
IGW08T120
Low Loss IGBT in Trench and Fieldstop technology
Approx. 1.0V reduced VCE(sat) compared to BUP305D
Short circuit withstand time – 10µs
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
G
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
E
Type
VCE
IC VCE(sat),Tj=25°C
IGW08T120
1200V
8A
1.7V
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
www.DaVtaCSEhee1t42U0.c0oVm, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Gate-emitter voltage
Short circuit withstand time1)
VGE = 15V, VCC 1200V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Tj,max
150°C
Package
TO-247AC
Ordering Code
Q67040-S4513
Symbol
VCE
IC
ICpuls
-
IF
VGE
tSC
Ptot
Tj
Tstg
-
Value
1200
16
8
24
24
Unit
V
A
16
8
±20
10
70
-40...+150
-55...+150
260
V
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Preliminary / Rev. 1 Sep-03


IGW08T120 데이터시트, 핀배열, 회로
Preliminary
TrenchStoP Series
IGW08T120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJA
Conditions
TO-247AC
Max. Value
1.7
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
www.DataSheet4U.com
Integrated gate resistor
V(BR)CES
VCE(sat)
VGE(th)
ICES
VGE=0V, IC=0.5mA
VGE = 15V, IC=8A
Tj=25°C
Tj=125°C
Tj=150°C
IC=0.3mA,VCE=VGE
VCE=1200V,
VGE=0V
Tj=25°C
Tj=150°C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=8A
min.
1200
-
-
-
5.0
-
-
-
-
Value
typ.
-
1.7
2.0
2.2
5.8
-
-
-
5
none
Unit
max.
-V
2.2
-
-
6.5
mA
0.2
2.0
100 nA
-S
Power Semiconductors
2
Preliminary / Rev. 1 Sep-03




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Low Loss IGBT - Infineon Technologies