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Infineon Technologies |
Preliminary
TrenchStoP Series
IGW08T120
Low Loss IGBT in Trench and Fieldstop technology
• Approx. 1.0V reduced VCE(sat) compared to BUP305D
• Short circuit withstand time – 10µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
G
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
E
Type
VCE
IC VCE(sat),Tj=25°C
IGW08T120
1200V
8A
1.7V
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
www.DaVtaCSEh≤ee1t42U0.c0oVm, Tj ≤ 150°C
Diode forward current
TC = 25°C
TC = 100°C
Gate-emitter voltage
Short circuit withstand time1)
VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Tj,max
150°C
Package
TO-247AC
Ordering Code
Q67040-S4513
Symbol
VCE
IC
ICpuls
-
IF
VGE
tSC
Ptot
Tj
Tstg
-
Value
1200
16
8
24
24
Unit
V
A
16
8
±20
10
70
-40...+150
-55...+150
260
V
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Preliminary / Rev. 1 Sep-03
Preliminary
TrenchStoP Series
IGW08T120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJA
Conditions
TO-247AC
Max. Value
1.7
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
www.DataSheet4U.com
Integrated gate resistor
V(BR)CES
VCE(sat)
VGE(th)
ICES
VGE=0V, IC=0.5mA
VGE = 15V, IC=8A
Tj=25°C
Tj=125°C
Tj=150°C
IC=0.3mA,VCE=VGE
VCE=1200V,
VGE=0V
Tj=25°C
Tj=150°C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=8A
min.
1200
-
-
-
5.0
-
-
-
-
Value
typ.
-
1.7
2.0
2.2
5.8
-
-
-
5
none
Unit
max.
-V
2.2
-
-
6.5
mA
0.2
2.0
100 nA
-S
Ω
Power Semiconductors
2
Preliminary / Rev. 1 Sep-03
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