파트넘버.co.kr 2MBI100S-120 데이터시트 PDF


2MBI100S-120 반도체 회로 부품 판매점

IGBT Module



ETC 로고
ETC
2MBI100S-120 데이터시트, 핀배열, 회로
2MBI100S-120
IGBT Module
1200V / 100A 2 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
www.DataSheetM4Ua.cxomimum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Symbol
Rating
Unit
Collector-Emitter voltage
VCES
1200
V
Gate-Emitter voltaga
VGES
±20 V
Collector Continuous Tc=25°C IC
150 A
current
Tc=80°C
100 A
1ms Tc=25°C IC pulse
300 A
Tc=80°C
200 A
-IC 100 A
1ms
-IC pulse
200 A
Max. power dissipation
PC
780 W
Operating temperature
Tj
+150
°C
Storage temperature
Tstg
-40 to +125
°C
Isolation voltage *1
Vis AC 2500 (1min. ) V
Screw torque
Mounting *2 3.5 N·m
Terminals *2 4.5 N·m
Equivalent Circuit Schematic
C2E1
C1 E2
G1 E1
G2 E2
*1 : Aii terminals should be connected together when isolation test will be done
*2 : Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6)
Terminals 3.5 to 4.5 N·m(M6)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbol
Characteristics
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
ICES
IGES
VGE(th)
VCE(sat)
Min.
5.5
Typ.
7.2
2.3
Max.
2.0
0.4
8.5
2.6
– 2.8 –
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Cies
Coes
Cres
ton
– 12000
– 2500 –
– 2200 –
– 0.35 1.2
tr – 0.25 0.6
Turn-off time
tr(i) – 0.1 –
toff – 0.45 1.0
Forward on voltage
tf – 0.08 0.3
VF – 2.3 3.0
– 2.0 –
Reverse recovery time trr – – 0.35
Conditions
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=100mA
Tc=25° C VGE=15V, IC=100A
Tc=125°C
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=100A
VGE=±15V
RG=9.1 ohm
Tj=25°C
Tj=125°C
IF=100A
IF=100A, VGE=0V
Thermal resistance characteristics
Item
Symbol
Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*2
Characteristics
Min.
Typ.
––
––
– 0.025
Max.
0.16
0.33
Conditions
IGBT
Diode
the base to cooling fin
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Unit
mA
µA
V
V
pF
µs
V
µs
Unit
°C/W
°C/W
°C/W


2MBI100S-120 데이터시트, 핀배열, 회로
2MBI100S-120
Characteristics (Representative)
Collector current vs. Collector-Emiiter voltage
Tj= 25°C (typ.)
250
VGE= 20V15V 12V
200
150
100
www.DataSheet4U.com
50
0
0
10V
1234
Collector - Emitter voltage : VCE [ V ]
8V
5
Collector current vs. Collector-Emiiter voltage
VGE=15V (typ.)
250
Tj= 25°C
Tj= 125°C
200
150
100
50
0
012345
Collector - Emitter voltage : VCE [ V ]
50000
Capacitance vs. Collector-Emiiter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
10000
5000
Cies
1000
Coes
Cres
100
0
5 10 15 20 25 30
Collector - Emitter voltage : VCE [ V ]
35
IGBT Module
Collector current vs. Collector-Emiiter voltage
Tj= 125°C (typ.)
250
VGE= 20V15V 12V
200
150
10V
100
50
8V
0
012345
Collector - Emitter voltage : VCE [ V ]
Collector-Emiiter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
10
8
6
4
2
0
5
1000
Ic= 200A
Ic= 100A
Ic=50A
10 15 20
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=100A, Tj= 25°C
25
25
800 20
600 15
400 10
200 5
00
0 200 400 600 800 1000
Gate charge : Qg [ nC ]




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2MBI100S-120 igbt

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