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PDF FZ200R65KF1 Data sheet ( Hoja de datos )
| Número de pieza | FZ200R65KF1 | |
| Descripción | IGBT Modules | |
| Fabricantes | Eupec GmbH | |
| Logotipo |  |
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 200 R 65 KF1
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Tvj=125°C
Tvj=25°C
Tvj=-40°C
Kollektor-Dauergleichstrom
DC-collector current
TC = 80 °C
TC = 25 °C
www.DataSheet4U.comPeriodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms, TC = 80°C
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
Grenzlastintegral der Diode
I2t - value, Diode
VR = 0V, tp = 10ms, TVj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
Teilentladungs Aussetzspannung
partial discharge extinction voltage
RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287)
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
I2t
VISOL
VISOL
6500
6300
5800
200
400
400
3,8
+/- 20V
200
400
26
10,2
5,1
V
A
A
A
kW
V
A
A
k A2s
kV
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
IC = 200A, VGE = 15V, Tvj = 25°C
IC = 200A, VGE = 15V, Tvj = 125°C
Gate-Schwellenspannung
gate threshold voltage
IC = 35mA, VCE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V ... +15V
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 6300V, VGE = 0V, Tvj = 25°C
VCE = 6500V, VGE = 0V, Tvj = 125°C
VCE = 0V, VGE = 20V, Tvj = 25°C
VCE sat
min.
-
-
typ.
4,3
5,3
max.
4,9
5,9
VGE(th)
6,4
7,0
8,1
V
V
V
QG - 2,8 - µC
Cies - 28 - nF
ICES
-
0,2
20
-
mA
mA
IGES
-
- 400 nA
prepared by: Dr. Oliver Schilling
approved by: Dr. Schütze 2002-07-05
date of publication: 2002-07-05
revision/Status: Series 1
1 FZ 200 R65 KF1 (final 1).xls
1 page  
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 200 R 65 KF1
www.DataSheet4U.com
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
450
IC = f (VGE)
VCE = 10V
400
350
25°C
125°C
300
250
200
150
100
50
0
5 6 7 8 9 10 11 12 13 14 15
VGE [V]
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
450
400
25°C
350 125°C
300
250
200
150
100
50
0
0,0 1,0 2,0 3,0 4,0
VF [V]
IF = f (VF)
5,0 6,0
7,0
5 FZ 200 R65 KF1 (final 1).xls
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FZ200R65KF1.PDF ] | |
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