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Fairchild Semiconductor |
www.DataSheet4U.com
March 2006
FGD2N40L
400V N-Channel Logic Level IGBT
Features
VCE(SAT) = 1.6V @ IC = 2.5A, VGE = 2.4V
6kV ESD Protected
High Peak Current Density
TO-252 (D-Pak)
Low VGE(TH)
General Description
This N-Channel IGBT is a MOS gated, logic level device
which has been especially tailored for small engine ignition
applications. The gate is ESD protected with a zener diode.
Applications
Small Engine Ignition Applications
©2006 Fairchild Semiconductor Corporation
FGD2N40L Rev. A
1
www.fairchildsemi.com
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Device Maximum Ratings TA= 25°C unless otherwise noted
Symbol
BVCES
IC
ICP
VGES
VGEP
PD
TJ
TSTG
ESD
Parameter
Collector to Emitter Breakdown Voltage
Collector Current Continuous(DC)
Collector Current Pulsed(100µs)
Gate to Emitter Voltage Continuous(DC)
Gate to Emitter Voltage Pulsed
Power Dissipation Total TC = 25oC
Operating Junction Temperature Range
Storage Junction Temperature Range
Electrostatic Discharge Voltage at 100pF, 1500Ω
Package Marking and Ordering Information
Device Marking
FGD2N40
Device
FGD2N40L
Package
D-PAK
Ratings
400
7
29
±8
±10
29
-40 to 150
-40 to 150
6
Units
V
A
A
V
V
W
°C
°C
kV
Tape Width
12mm / 16mm
Quantity
2500
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVCES
BVGES
ICES
IGES
Collector to Emitter Breakdown Voltage
Gate-Emitter Breakdown Voltage
Collector to Emitter leakage Current
Gate-Emitter Leakage Current
IC = 1mA, VGE = 0V
IGES = ±1mA
VCE = 320V
TC = +25oC
TC = +125oC
VGE = ±8
400
±10
-
-
-
On Characteristics
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 2.5A, VGE = 2.4V(NOTE1)
-
Dynamic Characteristics
QG(ON)
VGEP
VGE(TH)
CIES
RG
Gate Charge
Gate to Emitter Plateau Voltage
Gate to Emitter Threshold Voltage
Input Capacitance
Internal Gate Series Resistance
IC = 2.5A, VCE = 300V,
VGE = 10V
IC = 2.5A, VCE = 300V
IC = 1.0mA, VCE = VGE
VCE = 10V, VGE = 0V,
f =1MHz
-
-
0.70
-
Switching Characteristics
tON
td(ON)I
trI
tOFF
td(OFF)I
tfI
Turn-On Time
Current Turn-On Delay Time
Current Rise Time
Turn-Off Time
Current Turn-Off Delay Time
Current Fall Time
VCC = 300V, IC = 2.5A,
VGE = 4V, RL
RG = 51Ω, TJ
=
=
120Ω,
25oC
-
-
-
-
-
-
Thermal Characteristics
RθJC
Thermal Resistance Junction-Case
TO-252 (D-Pak)
-
Typ Max
--
--
- 10
- 250
- ±10
1.3 1.6
11 -
1.8 -
0.85 1.2
357 -
300
0.142
0.047
0.095
2.152
0.650
1.529
-
-
-
-
-
-
- 4.29
Units
V
V
µA
µA
µA
V
nC
V
V
pF
ohms
µs
µs
µs
µs
µs
µs
°C/W
Notes:
1: Pulse Duration = 100 µsec
FGD2N40L Rev. A
2 www.fairchildsemi.com
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