6MBI100UB-120 반도체 회로 부품 판매점
IGBT Module U-Series 1200V / 100A 6 in one-package
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6MBI100UB-120www.DataSheet4U.com
IGBT Module U-Series 1200V / 100A 6 in one-package
Features
Applications
· High speed switching
· Voltage drive
· Low inductance module structure
· Inverter for Motor drive
· Uninterruptible power supply
· AC and DC Servo drive amplifier · Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
Symbol
VCES
VGES
IC
ICp
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
between thermistor and others *2
Screw Torque
Mounting *3
-IC
-IC pulse
PC
Tj
Tstg
Viso
Conditions
Continuous Tc=25°C
Tc=80°C
1ms Tc=25°C
Tc=80°C
1 device
AC:1min.
Rating
1200
±20
150
100
300
200
100
200
520
+150
-40 to +125
2500
3.5
Unit
V
V
A
W
°C
VAC
N·m
*1 : All terminals should be connected together when isolation test will be done.
*2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted
to base plate when isolation test will be done.
*3 :Recommendable value : 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols Conditions
Characteristics
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
ICES
IGES
VGE(th)
VCE(sat)
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=100mA
VGE=15V, IC=100A Tj=25°C
Min.
–
–
4.5
–
Typ.
–
–
6.5
2.10
Max.
1.0
200
8.5
2.45
(terminal)
Tj=125°C
–
2.35 –
VCE(sat)
Tj=25°C
–
1.75 2.10
(chip)
Tj=125°C
–
2.00 –
Input capacitance
Turn-on time
Cies VCE=10V, VGE=0V, f=1MHz
ton VCC=600V
– 11
–
– 0.36 1.20
tr IC=100A
– 0.21 0.60
Turn-off time
tr(i) VGE=±15V
toff RG=5.6 Ω
– 0.03 –
– 0.37 1.00
tf – 0.07 0.30
Forward on voltage
VF VGE=0V
Tj=25°C
–
1.95 2.25
(terminal) IF=100A
Tj=125°C
–
2.05 –
VF
Tj=25°C
–
1.60 1.90
(chip)
Tj=125°C
–
1.70 –
Reverse recovery time
Lead resistance, terminal-chip*4
trr
R lead
IF=100A
––
0.35
– 3.4 –
Resistance
R T=25°C
– 5000
–
B value
B
*4:Biggest internal terminal resistance among arm.
T=100°C
T=25/50°C
465
3305
495
3375
520
3450
Unit
mA
nA
V
V
nF
µs
V
µs
mΩ
Ω
Κ
Thermal resistance characteristics
Items
Symbols
Conditions
Thermal resistance
Contact Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*5
IGBT
FWD
With thermal compound
Characteristics
Min.
–
Typ.
–
––
– 0.05
Max.
0.24
0.39
–
Unit
°C/W
°C/W
°C/W
*5 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
6MBI100UB-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
250
VGE=20V 15V 12V
200
150
10V
100
50
0
0
8V
1 23 4
Collector-Emitter voltage : VCE [V]
5
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
250
T j=25°C T j=125°C
200
150
100
50
0
0 12 3
Collector-Emitter voltage : VCE [V]
4
100.0
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1M Hz, Tj= 25°C
Cies
10.0
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
250
VGE=20V 15V
12V
200
150
10V
100
50
0
0
8V
1 234
Collector-Emitter voltage : VCE [V]
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
2
Ic=200A
Ic=100A
Ic= 50A
0
5 10 15 20 25
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=100A, Tj= 25°C
VGE
Cres
1.0
Coes
0.1
0
10 20
Collector-Emitter voltage : VCE [V]
30
0
0
VCE
200 400
Gate charge : Qg [ nC ]
600
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6MBI100UB-120 igbt
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