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NGP8203N 반도체 회로 부품 판매점

Ignition IGBT



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ON Semiconductor
NGP8203N 데이터시트, 핀배열, 회로
www.DataSheet4U.com
NGP8203N
Ignition IGBT
20 A, 400 V, NChannel TO220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for CoilonPlug and DriveronCoil Applications
GateEmitter ESD Protection
Temperature Compensated GateCollector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG) and GateEmitter Resistor (RGE)
Applications
Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
CollectorEmitter Voltage
CollectorGate Voltage
GateEmitter Voltage
Collector CurrentContinuous
@ TC = 25°C Pulsed
VCES
VCER
VGE
IC
440
440
"15
20
50
V
V
V
ADC
AAC
Continuous Gate Current
Transient Gate Current (t2 ms, f100 Hz)
ESD (ChargedDevice Model)
IG
IG
ESD
1.0 mA
20 mA
2.0 kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 150 Watts
1.0 W/°C
Operating & Storage Temperature Range TJ, Tstg 55 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
20 AMPS
400 VOLTS
VCE(on) = 1.3 V @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
E
MARKING
DIAGRAM
NGP
8203N
YWW
1
TO220
CASE 221A
STYLE 9
G CE
NGP8203N = Device Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
NGP8203N
Package
TO220
Shipping
50 Units / Rail
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 1
1
Publication Order Number:
NGP8203N/D


NGP8203N 데이터시트, 핀배열, 회로
NGP8203N
UNCLAMPED COLLECTORTOEMITTER AVALANCHE CHARACTERISTICS (55° ≤ TJ 175°C)
Characteristic
Symbol
Single Pulse CollectortoEmitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 150°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 175°C
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
EAS
EAS(R)
THERMAL CHARACTERISTICS
Thermal Resistance, JunctiontoCase
Thermal Resistance, JunctiontoAmbient
Maximum Temperature for Soldering Purposes, 1/8from case for 5 seconds (Note 1)
1. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
RqJC
RqJA
TL
Value
250
200
180
2000
1.0
62.5
275
Unit
mJ
mJ
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
OFF CHARACTERISTICS
CollectorEmitter Clamp Voltage
BVCES
Zero Gate Voltage Collector Current
ICES
Reverse CollectorEmitter Clamp
Voltage
BVCES(R)
Test Conditions
IC = 2.0 mA
IC = 10 mA
VGE = 0 V,
VCE = 15 V
VCE = 200 V,
VGE = 0 V
IC = 75 mA
Reverse CollectorEmitter Leakage
Current
ICES(R)
VCE = 24 V
GateEmitter Clamp Voltage
GateEmitter Leakage Current
Gate Resistor (Optional)
GateEmitter Resistor
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
BVGES
IGES
RG
RGE
VGE(th)
IG = "5.0 mA
VGE = "5.0 V
IC = 1.0 mA,
VGE = VCE
Threshold Temperature Coefficient
(Negative)
*Maximum Value of Characteristic across Temperature Range.
2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Temperature
Min Typ Max Unit
TJ = 40°C to 175°C 370 395 420
TJ = 40°C to 175°C 390 415 440
TJ = 25°C
0.1 1.0
V
mA
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 40°C to 175°C
TJ = 40°C to 175°C
TJ = 40°C to 175°C
TJ = 40°C to 175°C
0.5
1.0
0.4
30
35
30
0.05
1.0
0.005
12
200
14.25
1.5
25
0.8
35
39
33
0.1
5.0
0.01
12.5
300
70
16
10
100*
5.0
39
45*
37
0.5
10*
0.1
14
350*
25
mA
V
mA
V
mA
W
kW
TJ = 25°C
TJ = 175°C
TJ = 40°C
1.5 1.8 2.1
V
0.7 1.0 1.3
1.7 2.0 2.3*
4.0 4.6 5.2 mV/°C
http://onsemi.com
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NGP8203N igbt

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Ignition IGBT - ON Semiconductor