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NGP8203N
Ignition IGBT
20 A, 400 V, N−Channel TO−220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
Applications
• Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
VCES
VCER
VGE
IC
440
440
"15
20
50
V
V
V
ADC
AAC
Continuous Gate Current
Transient Gate Current (t≤2 ms, f≤100 Hz)
ESD (Charged−Device Model)
IG
IG
ESD
1.0 mA
20 mA
2.0 kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 150 Watts
1.0 W/°C
Operating & Storage Temperature Range TJ, Tstg −55 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
20 AMPS
400 VOLTS
VCE(on) = 1.3 V @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
E
MARKING
DIAGRAM
NGP
8203N
YWW
1
TO−220
CASE 221A
STYLE 9
G CE
NGP8203N = Device Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
NGP8203N
Package
TO−220
Shipping
50 Units / Rail
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 1
1
Publication Order Number:
NGP8203N/D
NGP8203N
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)
Characteristic
Symbol
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 150°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 175°C
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
EAS
EAS(R)
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 1)
1. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
RqJC
RqJA
TL
Value
250
200
180
2000
1.0
62.5
275
Unit
mJ
mJ
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
BVCES
Zero Gate Voltage Collector Current
ICES
Reverse Collector−Emitter Clamp
Voltage
BVCES(R)
Test Conditions
IC = 2.0 mA
IC = 10 mA
VGE = 0 V,
VCE = 15 V
VCE = 200 V,
VGE = 0 V
IC = −75 mA
Reverse Collector−Emitter Leakage
Current
ICES(R)
VCE = −24 V
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Resistor (Optional)
Gate−Emitter Resistor
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
BVGES
IGES
RG
RGE
VGE(th)
IG = "5.0 mA
VGE = "5.0 V
IC = 1.0 mA,
VGE = VCE
Threshold Temperature Coefficient
(Negative)
*Maximum Value of Characteristic across Temperature Range.
2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Temperature
Min Typ Max Unit
TJ = −40°C to 175°C 370 395 420
TJ = −40°C to 175°C 390 415 440
TJ = 25°C
0.1 1.0
V
mA
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = −40°C to 175°C
TJ = −40°C to 175°C
TJ = −40°C to 175°C
TJ = −40°C to 175°C
0.5
1.0
0.4
30
35
30
0.05
1.0
0.005
12
200
14.25
1.5
25
0.8
35
39
33
0.1
5.0
0.01
12.5
300
70
16
10
100*
5.0
39
45*
37
0.5
10*
0.1
14
350*
25
mA
V
mA
V
mA
W
kW
TJ = 25°C
TJ = 175°C
TJ = −40°C
1.5 1.8 2.1
V
0.7 1.0 1.3
1.7 2.0 2.3*
4.0 4.6 5.2 mV/°C
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