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NGB8206N, NGB8206AN
Ignition IGBT
20 A, 350 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• These are Pb−Free Devices
Applications
• Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
VCES
VCER
VGE
IC
390
390
$15
20
50
V
V
V
ADC
AAC
Continuous Gate Current
Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz)
ESD (Charged−Device Model)
IG
IG
ESD
1.0 mA
20 mA
2.0 kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
V
Total Power Dissipation
Derate above 25°C
@
TC
=
25°C
PD
150 W
1.0 W/°C
Operating & Storage Temperature Range
TJ, Tstg
−55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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20 AMPS, 350 VOLTS
VCE(on) = 1.3 V @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
E
MARKING DIAGRAM
4 Collector
1
D2PAK
CASE 418B
STYLE 4
GB
8206xxG
AYWW
13
Gate
2
Emitter
Collector
GB8206xx = Device Code
xx = N or AN
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 9
1
Publication Order Number:
NGB8206N/D
NGB8206N, NGB8206AN
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)
Characteristic
Symbol
Value
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 150°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 175°C
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
EAS
EAS(R)
250
200
180
2000
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
RqJC
Thermal Resistance, Junction−to−Ambient (Note 1)
RqJA
Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 2)
TL
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
1.0
62.5
275
Unit
mJ
mJ
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
Symbol
BVCES
Zero Gate Voltage Collector Current
ICES
Reverse Collector−Emitter Clamp
Voltage
BVCES(R)
Test Conditions
IC = 2.0 mA
IC = 10 mA
VCE = 15 V,
VGE = 0 V
VCE = 175 V,
VGE = 0 V
IC = −75 mA −
NGB8206
Reverse Collector−Emitter Leakage Cur-
rent
ICES(R)
IC = −75 mA −
NGB8206A
VCNEG=B−822406V −
VCE = −24 V −
NGB8206A
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Resistor
Gate−Emitter Resistor
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
BVGES
IGES
RG
RGE
VGE(th)
IG = $5.0 mA
VGE = $5.0 V
ICVG=E1=.0VmCAE,
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Temperature
Min Typ Max Unit
TJ = −40°C to 175°C
TJ = −40°C to 175°C
325
340
350
365
TJ = 25°C
0.1
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = −40°C to 175°C
TJ = −40°C to 175°C
TJ = −40°C to 175°C
TJ = −40°C to 175°C
0.5
1.0
0.4
30
35
30
30
32
29
0.05
1.0
0.005
0.05
1.0
0.005
12
200
14.25
1.5
25
0.8
35
39
33
35
37
32
0.25
12.5
0.03
0.25
12.5
0.03
12.5
300
70
16
375
390
1.0
10
100*
5.0
39
45*
37
39
42
37
0.5
25
0.25
1.0
25
0.25
14
350*
25
V
mA
V
mA
V
mA
W
kW
TJ = 25°C
TJ = 175°C
TJ = −40°C
1.5 1.8 2.1
0.7 1.0 1.3
1.7 2.0 2.3*
V
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