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NGB8206N 반도체 회로 부품 판매점

Ignition IGBT



ON Semiconductor 로고
ON Semiconductor
NGB8206N 데이터시트, 핀배열, 회로
NGB8206N, NGB8206AN
Ignition IGBT
20 A, 350 V, NChannel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for CoilonPlug and DriveronCoil Applications
GateEmitter ESD Protection
Temperature Compensated GateCollector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
These are PbFree Devices
Applications
Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
CollectorEmitter Voltage
CollectorGate Voltage
GateEmitter Voltage
Collector CurrentContinuous
@ TC = 25°C Pulsed
VCES
VCER
VGE
IC
390
390
$15
20
50
V
V
V
ADC
AAC
Continuous Gate Current
Transient Gate Current (t 2 ms, f 100 Hz)
ESD (ChargedDevice Model)
IG
IG
ESD
1.0 mA
20 mA
2.0 kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
V
Total Power Dissipation
Derate above 25°C
@
TC
=
25°C
PD
150 W
1.0 W/°C
Operating & Storage Temperature Range
TJ, Tstg
55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
20 AMPS, 350 VOLTS
VCE(on) = 1.3 V @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
E
MARKING DIAGRAM
4 Collector
1
D2PAK
CASE 418B
STYLE 4
GB
8206xxG
AYWW
13
Gate
2
Emitter
Collector
GB8206xx = Device Code
xx = N or AN
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
February, 2012 Rev. 9
1
Publication Order Number:
NGB8206N/D


NGB8206N 데이터시트, 핀배열, 회로
NGB8206N, NGB8206AN
UNCLAMPED COLLECTORTOEMITTER AVALANCHE CHARACTERISTICS (55° ≤ TJ 175°C)
Characteristic
Symbol
Value
Single Pulse CollectortoEmitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 150°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 175°C
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
EAS
EAS(R)
250
200
180
2000
THERMAL CHARACTERISTICS
Thermal Resistance, JunctiontoCase
RqJC
Thermal Resistance, JunctiontoAmbient (Note 1)
RqJA
Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 2)
TL
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
1.0
62.5
275
Unit
mJ
mJ
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
CollectorEmitter Clamp Voltage
Symbol
BVCES
Zero Gate Voltage Collector Current
ICES
Reverse CollectorEmitter Clamp
Voltage
BVCES(R)
Test Conditions
IC = 2.0 mA
IC = 10 mA
VCE = 15 V,
VGE = 0 V
VCE = 175 V,
VGE = 0 V
IC = 75 mA
NGB8206
Reverse CollectorEmitter Leakage Cur-
rent
ICES(R)
IC = 75 mA
NGB8206A
VCNEG=B822406V
VCE = 24 V
NGB8206A
GateEmitter Clamp Voltage
GateEmitter Leakage Current
Gate Resistor
GateEmitter Resistor
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
BVGES
IGES
RG
RGE
VGE(th)
IG = $5.0 mA
VGE = $5.0 V
ICVG=E1=.0VmCAE,
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Temperature
Min Typ Max Unit
TJ = 40°C to 175°C
TJ = 40°C to 175°C
325
340
350
365
TJ = 25°C
0.1
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 40°C to 175°C
TJ = 40°C to 175°C
TJ = 40°C to 175°C
TJ = 40°C to 175°C
0.5
1.0
0.4
30
35
30
30
32
29
0.05
1.0
0.005
0.05
1.0
0.005
12
200
14.25
1.5
25
0.8
35
39
33
35
37
32
0.25
12.5
0.03
0.25
12.5
0.03
12.5
300
70
16
375
390
1.0
10
100*
5.0
39
45*
37
39
42
37
0.5
25
0.25
1.0
25
0.25
14
350*
25
V
mA
V
mA
V
mA
W
kW
TJ = 25°C
TJ = 175°C
TJ = 40°C
1.5 1.8 2.1
0.7 1.0 1.3
1.7 2.0 2.3*
V
http://onsemi.com
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NGB8206N igbt

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