|
ON Semiconductor |
NGB8204N, NGB8204AN
Ignition IGBT
18 Amps, 400 Volts
N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Integrated Gate−Emitter Resistor (RGE)
• Emitter Ballasting for Short−Circuit Capability
• These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
VCES
VCER
VGE
IC
430 VDC
430 VDC
18 VDC
18 ADC
50 AAC
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF ESD 800 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 115 W
0.77 W/°C
Operating and Storage Temperature Range TJ, Tstg
−55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
18 AMPS, 400 VOLTS
VCE(on) 3 2.0 V @
IC = 10 A, VGE . 4.5 V
C
G
RGE
E
D2PAK
CASE 418B
1 STYLE 4
MARKING DIAGRAM
4
Collector
GB
8204xG
AYWW
13
Gate
2
Emitter
Collector
GB8204x
A
Y
WW
G
= Device Code
x = N or A
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NGB8204NT4G
D2PAK 800 / Tape & Reel
(Pb−Free)
NGB8204ANT4G D2PAK 800 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
December, 2011 − Rev. 4
1
Publication Order Number:
NGB8204N/D
NGB8204N, NGB8204AN
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)
Characteristic
Symbol
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 18.3 A, L = 1.8 mH, Starting TJ = 125°C
EAS
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
EAS(R)
MAXIMUM SHORT−CIRCUIT TIMES (−55°C ≤ TJ ≤ 150°C)
Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period)
tsc1
Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period)
tsc2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
D2PAK (Note 1)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2)
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. For further details, see Soldering and Mounting Techniques Reference Manua, SOLDERRM/D.
RqJC
RqJA
TL
Value
400
300
2000
750
5.0
Value
1.3
50
275
Unit
mJ
mJ
ms
ms
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
BVCES
Zero Gate Voltage Collector Current
ICES
Reverse Collector−Emitter Leakage
Current
IECS
Test Conditions
IC = 2.0 mA
IC = 10 mA
VVCEGE=
350 V,
=0V
VCE = −24 V
Reverse Collector−Emitter Clamp
Voltage
BVCES(R)
IC = −75 mA
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Emitter Resistor
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
BVGES
IGES
RGE
VGE(th)
IG = 5.0 mA
VGE = 10 V
−
IC = 1.0 mA,
VGE = VCE
Threshold Temperature Coefficient
(Negative)
−
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
−
Temperature
Min Typ Max Unit
TJ = −40°C to 150°C 380 395 420
VDC
TJ = −40°C to 150°C 390 405 430
TJ = 25°C
− 2.0 10 mADC
TJ = 150°C
− 10 40*
TJ = −40°C
− 1.0 10
TJ = 25°C
− 0.7 1.0 mA
TJ = 150°C
− 12 25*
TJ = −40°C
− 0.1 1.0
TJ = 25°C
27 33 37 VDC
TJ = 150°C
30 36 40
TJ = −40°C
25 32 35
TJ = −40°C to 150°C 11 13 15 VDC
TJ = −40°C to 150°C 384 640 700 mADC
TJ = −40°C to 150°C 10 16 26
kW
TJ = 25°C
TJ = 150°C
TJ = −40°C
−
1.1 1.4 1.9 VDC
0.75 1.0 1.4
1.2 1.6 2.1*
− 3.4 − mV/°C
http://onsemi.com
2
|