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NGB8204N 반도체 회로 부품 판매점

Ignition IGBT



ON Semiconductor 로고
ON Semiconductor
NGB8204N 데이터시트, 핀배열, 회로
NGB8204N, NGB8204AN
Ignition IGBT
18 Amps, 400 Volts
NChannel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for CoilonPlug Applications
GateEmitter ESD Protection
Temperature Compensated GateCollector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Integrated GateEmitter Resistor (RGE)
Emitter Ballasting for ShortCircuit Capability
These are PbFree Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
CollectorEmitter Voltage
CollectorGate Voltage
GateEmitter Voltage
Collector CurrentContinuous
@ TC = 25°C Pulsed
VCES
VCER
VGE
IC
430 VDC
430 VDC
18 VDC
18 ADC
50 AAC
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF ESD 800 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 115 W
0.77 W/°C
Operating and Storage Temperature Range TJ, Tstg
55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
18 AMPS, 400 VOLTS
VCE(on) 3 2.0 V @
IC = 10 A, VGE . 4.5 V
C
G
RGE
E
D2PAK
CASE 418B
1 STYLE 4
MARKING DIAGRAM
4
Collector
GB
8204xG
AYWW
13
Gate
2
Emitter
Collector
GB8204x
A
Y
WW
G
= Device Code
x = N or A
= Assembly Location
= Year
= Work Week
= PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
NGB8204NT4G
D2PAK 800 / Tape & Reel
(PbFree)
NGB8204ANT4G D2PAK 800 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
December, 2011 Rev. 4
1
Publication Order Number:
NGB8204N/D


NGB8204N 데이터시트, 핀배열, 회로
NGB8204N, NGB8204AN
UNCLAMPED COLLECTORTOEMITTER AVALANCHE CHARACTERISTICS (55° ≤ TJ 175°C)
Characteristic
Symbol
Single Pulse CollectortoEmitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 18.3 A, L = 1.8 mH, Starting TJ = 125°C
EAS
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
EAS(R)
MAXIMUM SHORTCIRCUIT TIMES (55°C TJ 150°C)
Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period)
tsc1
Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period)
tsc2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, JunctiontoCase
Thermal Resistance, JunctiontoAmbient
D2PAK (Note 1)
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 5 seconds (Note 2)
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. For further details, see Soldering and Mounting Techniques Reference Manua, SOLDERRM/D.
RqJC
RqJA
TL
Value
400
300
2000
750
5.0
Value
1.3
50
275
Unit
mJ
mJ
ms
ms
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
OFF CHARACTERISTICS
CollectorEmitter Clamp Voltage
BVCES
Zero Gate Voltage Collector Current
ICES
Reverse CollectorEmitter Leakage
Current
IECS
Test Conditions
IC = 2.0 mA
IC = 10 mA
VVCEGE=
350 V,
=0V
VCE = 24 V
Reverse CollectorEmitter Clamp
Voltage
BVCES(R)
IC = 75 mA
GateEmitter Clamp Voltage
GateEmitter Leakage Current
Gate Emitter Resistor
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
BVGES
IGES
RGE
VGE(th)
IG = 5.0 mA
VGE = 10 V
IC = 1.0 mA,
VGE = VCE
Threshold Temperature Coefficient
(Negative)
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Temperature
Min Typ Max Unit
TJ = 40°C to 150°C 380 395 420
VDC
TJ = 40°C to 150°C 390 405 430
TJ = 25°C
2.0 10 mADC
TJ = 150°C
10 40*
TJ = 40°C
1.0 10
TJ = 25°C
0.7 1.0 mA
TJ = 150°C
12 25*
TJ = 40°C
0.1 1.0
TJ = 25°C
27 33 37 VDC
TJ = 150°C
30 36 40
TJ = 40°C
25 32 35
TJ = 40°C to 150°C 11 13 15 VDC
TJ = 40°C to 150°C 384 640 700 mADC
TJ = 40°C to 150°C 10 16 26
kW
TJ = 25°C
TJ = 150°C
TJ = 40°C
1.1 1.4 1.9 VDC
0.75 1.0 1.4
1.2 1.6 2.1*
3.4 mV/°C
http://onsemi.com
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NGB8204N igbt

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