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PDF GA150TS60U Data sheet ( Hoja de datos )
| Número de pieza | GA150TS60U | |
| Descripción | HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT | |
| Fabricantes | International Rectifier | |
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"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD - 50056D
GA150TS60U
Ultra-FastTM Speed IGBT
VCES = 600V
VCE(on) typ. = 1.7V
@VGE = 15V, IC = 150A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector CurrentQ
Peak Switching CurrentR
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
600
150
300
300
300
±20
2500
440
230
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
www.irf.com
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink S
Mounting Torque, Case-to-Terminal 1, 2 & 3 T
Weight of Module
Typ.
—
—
0.1
—
—
200
Max.
0.28
0.35
—
6.0
5.0
—
Units
°C/W
N.m
g
1
05/20/02
1 page  
25000
20000
15000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
10000
5000
Coes
Cres
0
1 10 100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
GA150TS60U
20
VCC = 400V
I C = 94A
16
12
8
4
0
0 100 200 300 400 500 600 700
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
30
VCC = 360V
VGE = 15V
TJ = 21525°°CC
IC = 150A
25
20
100 RG1==27OΩh;mRG2 = 0 Ω
VGE = 15V
VCC = 360V
10
IC = 300 A
IC = 150 A
IC = 75 A
15
10
0
10 20 30 40 50
RRGG1, ,GGaateteRReessiisstancee ((OΩh) m)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page 
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet GA150TS60U.PDF ] | |
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