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FGA15N120ANTD 반도체 회로 부품 판매점

1200V NPT Trench IGBT



Fairchild Semiconductor 로고
Fairchild Semiconductor
FGA15N120ANTD 데이터시트, 핀배열, 회로
www.DataSheet4U.com
FGA15N120ANTD
1200V NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: VCE(sat), typ = 1.9V
@ IC = 15A and TC = 25°C
• Low switching loss: Eoff, typ = 0.6mJ
@ IC = 15A and TC = 25°C
• Extremely enhanced avalanche capability
May 2006
tm
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
This device is well suited for the resonant or soft switching appli-
cation such as induction heating, microwave oven, etc.
GCE
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current (Note 1)
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC
RθJC
RθJA
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
C
G
E
FGA15N120ANTD
1200
± 20
30
15
45
15
45
186
74
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.67
2.88
40
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FGA15N120ANTD Rev. A
1
www.fairchildsemi.com


FGA15N120ANTD 데이터시트, 핀배열, 회로
Package Marking and Ordering Information
Device Marking
Device
FGA15N120ANTD FGA15N120ANTD
Package
TO-3P
Reel Size
--
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 15mA, VCE = VGE
IC = 15A, VGE = 15V
IC = 15A, VGE = 15V,
TC = 125°C
IC = 30A, VGE = 15V
VCE = 30V, VGE = 0V,
f = 1MHz
VCC = 600 V, IC = 15A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 600 V, IC = 15A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 600 V, IC = 15A,
VGE = 15V
Tape Width
--
Quantity
30
Min. Typ. Max. Units
-- -- 3 mA
-- -- ± 250 nA
4.5 6.5 8.5
-- 1.9 2.4
-- 2.2 --
-- 2.3 --
V
V
V
V
-- 2650 --
-- 143 --
-- 96 --
pF
pF
pF
-- 15 -- ns
-- 20 -- ns
-- 160 --
ns
-- 100 180 ns
-- 3 4.5 mJ
--
0.6 0.9
mJ
--
3.6 5.4
mJ
-- 15 -- ns
-- 20 -- ns
-- 170 --
ns
-- 150 --
ns
--
3.2 4.8
mJ
--
0.8 1.2
mJ
--
4.0 6.0
mJ
--
120 180
nC
-- 16 22 nC
-- 50 65 nC
FGA15N120ANTD Rev. A
2
www.fairchildsemi.com




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