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PDF DIM100WHS17-E000 Data sheet ( Hoja de datos )
| Número de pieza | DIM100WHS17-E000 | |
| Descripción | IGBT Power Module | |
| Fabricantes | Dynex Semiconductor | |
| Logotipo |  |
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DIM100WHS17-E000
DIM100WHS17-E000
Half Bridge IGBT Module
FEATURES
I Trench Gate Field Stop Technology
I Low Conduction Losses
I Low Switching Losses
I 10µs Short Circuit Withstand
PDS5719-1.2 February 2004
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1700V
2.0V
100A
200A
APPLICATIONS
I Motor Drives
I Wind Turbines
I UPS Systems
7(E2)
6(G2)
1(E1C2)
2(E2)
3(C1)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM100WHS17-E000 is a half bridge 1700V, DnacthaaSnhnelet4U.com
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
4(G1)
5(E1)
Fig. 1 Half bridge circuit diagram
DataShee
ORDERING INFORMATION
Order As:
DIM100WHS17-E000
Note: When ordering, please use the complete part number.
Outline type code: W
(See package details for further information)
Fig. 2 Module Outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1 page  
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DIM100WHS17-E000
TYPICAL CHARACTERISTICS
200
Common emitter
Tcase = 25˚C
175
200
Common emitter
Tcase = 125˚C
175
150 150
125 125
100 100
75 75
et4U.com
50 50
Vge = 10V
25 Vge = 12V
Vge = 15V
Vge = 20V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
25
0
0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics DataSheet4U.com
Vge = 10V
Vge = 12V
Vge = 15V
Vge = 20V
1.0 2.0 3.0 4.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
5.0
DataShee
50 Conditions:
Tcase = 125ºC
45 Vcc = 900V
Rg = 15 ohms
40
35
125
Conditions:
Tcase = 125ºC
IC = 100A
Vcc = 900V
100
30 75
Eon
25 Eoff
Erec
20 50
15
10
5 Eon
Eoff
Erec
0
0 25 50 75 100 125
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
25
0
0 16 32 48 64 80 96 112
Gate resistance, Rg - (ohms)
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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| PDF Descargar | [ Datasheet DIM100WHS17-E000.PDF ] | |
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