파트넘버.co.kr DIM100WHS12-A000 데이터시트 PDF


DIM100WHS12-A000 반도체 회로 부품 판매점

IGBT Power Module



Dynex Semiconductor 로고
Dynex Semiconductor
DIM100WHS12-A000 데이터시트, 핀배열, 회로
www.DataSheet4U.com
DIM100WHS12-A000
DIM100WHS12-A000
Half Bridge IGBT Module
Replaces February 2004 version, issue DS5735-1.0
FEATURES
I 10µs Short Circuit Withstand
I Non Punch Through Silicon
I Isolated Copper Baseplate
APPLICATIONS
I Inverters
I Motor Controllers
DS5735-2.0 May 2004
KEY PARAMETERS
VCES
1200V
VCE(sat)*
(typ)
2.2V
IC
(max)
100A
IC(PK)
(max)
200A
*(Measured at the power busbars and not the auxiliary terminals)
7(E2)
6(G2)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
1(E1C2)
2(E2)
The DIM100WHS12-A000 is a half bridge switch 1200V, n
channel enhancement mode, insulated gate bipolarDtraatnasSishtoeret4U.com
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
Fig. 1 Half bridge circuit diagram
3(C1)
4(G1)
5(E1)
DataShee
ORDERING INFORMATION
Order As:
DIM100WHS12-A000
Note: When ordering, please use the whole part number.
Outline type code: W
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
DataSheewt4wU.wco.mdynexsemi.com
1/8
DataSheet4 U .com


DIM100WHS12-A000 데이터시트, 핀배열, 회로
www.DataSheet4U.com
DIM100WHS12-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
VCES
VGES
IC
I
C(PK)
Pmax
I2t
Visol
Q
PD
Collector-emitter voltage
Gate-emitter voltage
VGE = 0V
-
Continuous collector current
Tcase = 80˚C
Peak collector current
1ms, Tcase = 115˚C
Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C
Diode I2t value
V = 0, t = 10ms, T = 125˚C
Rp
vj
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Partial discharge - per module
IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS
Max. Units
1200 V
±20 V
100 A
200 A
694 W
1.56 kA2s
2500 V
10 PC
THERMAL AND MECHANICAL RATINGS
et4U.com
DataSheet4U.com
Internal insulation: Al2O3
Clearance: 13mm
Baseplate material: Cu
CTI (Critical Tracking Index): 175
Creepage distance: 24mm
Symbol
Parameter
Test Conditions
R
th(j-c)
Thermal resistance - transistor (per arm)
Continuous dissipation -
junction to case
Rth(j-c)
Thermal resistance - diode (per arm)
Continuous dissipation -
junction to case
R
th(c-h)
Thermal resistance - case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grease)
Tj Junction temperature
Transistor
Diode
Tstg Storage temperature range
- Screw torque
-
Mounting - M6
Electrical connections - M6
DataShee
Min. Typ. Max. Units
- - 180 ˚C/kW
- - 400 ˚C/kW
- - 15 ˚C/kW
- - 150 ˚C
- - 125 ˚C
–40 - 125 ˚C
3 - 5 Nm
2.5 -
5 Nm
2/8
DataSheet4U.com
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
DataSheet4 U .com




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DIM100WHS12-A000 igbt

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IGBT Power Module - Dynex Semiconductor