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PDF IGB01N120H2 Data sheet ( Hoja de datos )
| Número de pieza | IGB01N120H2 | |
| Descripción | IGBT | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IGB01N120H2 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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IGB01N120H2
HighSpeed 2-Technology
• Designed for frequency inverters for washing
machines, fans, pumps and vacuum cleaners
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =1A
• Qualified according to JEDEC2 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
C
G
E
PG-TO263-3-2
Type
IGB01N120H2
VCE
IC
Eoff
Tj
1200V 1A 0.09mJ 150°C
Marking
G01H1202
Package
PG-TO-263-3-2
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature (reflow soldering, MSL1)
Symbol
VCE
IC
ICpuls
-
VGE
Ptot
Tj , Tstg
-
Value
1200
3.2
1.3
3.5
3.5
±20
28
-40...+150
245
Unit
V
A
V
W
°C
2 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.4 Oct. 07
1 page  
IGB01N120H2
5A
4A
VGE=15V
12V
3A 10V
8V
6V
2A
1A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
5A
4A Tj=+150°C
Tj=+25°C
3A
2A
1A
0A
3V 5V 7V 9V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
5A
4A
VGE=15V
12V
3A 10V
8V
6V
2A
1A
0A
0V 1V 2V 3V 4V 5V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
4V
IC=2A
3V
IC=1A
2V
IC=0.5A
1V
0V
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2.4 Oct. 07
5 Page 
Figure A. Definition of switching times
Figure B. Definition of switching losses
IGB01N120H2
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr S
F
t
rr
tt
SF
Q
S
Q
F
10% I
rrm
t
di /dt
90% I r r
rrm
V
R
Figure C. Definition of diodes
switching characteristics
τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
½ Lσ
öö
DUT
(Diode)
L Cσ
Cr
VDC
RG
DUT
(IGBT)
½ Lσ
Figure E. Dynamic test circuit
Leakage inductance Lσ = 180nH,
Stray capacitor Cσ = 40pF,
Relief capacitor Cr = 1nF (only for
ZVT switching)
Power Semiconductors
11
Rev. 2.4 Oct. 07
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IGB01N120H2.PDF ] | |
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