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IGBT Power Module



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FZ1200R17KF6CB2 데이터시트, 핀배열, 회로
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 17 KF6C B2
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Tvj = 25°C
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
TC = 80 °C
TC = 25 °C
tP = 1 ms, TC = 80°C
vorläufige Daten
preliminary data
VCES
IC,nom.
IC
ICRM
1700
1200
1950
2400
V
A
A
A
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Ptot 9,6 kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
VGES
+/- 20V
V
Dauergleichstrom
DC forward current
IF
1200
A
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I2t - value, Diode
Isolations-Prüfspannung
insulation test voltage
tp = 1 ms
VR = 0V, tp = 10ms, TVj = 125°C
RMS, f = 50 Hz, t = 1 min.
IFRM
I2t
VISOL
2400
380
4
A
kA2s
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
IC = 1200A, V GE = 15V, Tvj = 25°C
IC = 1200A, V GE = 15V, Tvj = 125°C
IC = 80mA, VCE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V ... +15V
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
VCE = 1700V, V GE = 0V, Tvj = 25°C
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE = 20V, Tvj = 25°C
prepared by: A. Wiesenthal
approved by: Christoph Lübke; 12.04.2001
date of publication: 05.04.2001
revision: 1 (preliminary)
VCE sat
min.
typ.
2,6
3,1
max.
3,1
3,6
V
V
VGE(th)
4,5
5,5
6,5
V
QG
14,5
µC
Cies 79 nF
Cres
ICES
4 nF
5 mA
IGES 400 nA
1(8)
FZ1200R17KF6CB2_V.xls


FZ1200R17KF6CB2 데이터시트, 핀배열, 회로
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 17 KF6C B2
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
IC = 1200A, V CE = 900V
VGE = ±15V, RG = 1,2W, Tvj = 25°C
VGE = ±15V, RG = 1,2W, Tvj = 125°C
IC = 1200A, V CE = 900V
VGE = ±15V, RG = 1,2W, Tvj = 25°C
VGE = ±15V, RG = 1,2W, Tvj = 125°C
IC = 1200A, V CE = 900V
VGE = ±15V, RG = 1,2W, Tvj = 25°C
VGE = ±15V, RG = 1,2W, Tvj = 125°C
IC = 1200A, V CE = 900V
VGE = ±15V, RG = 1,2W, Tvj = 25°C
VGE = ±15V, RG = 1,2W, Tvj = 125°C
IC = 1200A, V CE = 900V, VGE = 15V
RG = 1,2W, Tvj = 125°C, LS = 50nH
IC = 1200A, V CE = 900V, VGE = 15V
RG = 1,2W, Tvj = 125°C, LS = 50nH
tP £ 10µsec, VGE £ 15V
TVj£125°C, VCC=1000V, VCEmax=VCES -LsCE ·dI/dt
Modulinduktivität
stray inductance module
vorläufige Daten
preliminary data
min. typ. max.
td,on 0,3 µs
0,3 µs
tr
0,16
µs
0,16
µs
td,off 1,1 µs
1,1 µs
tf
0,13
µs
0,14
µs
Eon
Eoff
ISC
LsCE
330
480
4800
12
mWs
mWs
A
nH
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
pro Zweig / per arm
RCC´+EE´
0,08
mW
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
IF = 1200A, V GE = 0V, Tvj = 25°C
IF = 1200A, V GE = 0V, Tvj = 125°C
IF = 1200A, - diF/dt = 7200A/µsec
VR = 900V, VGE = -10V, T vj = 25°C
VR = 900V, VGE = -10V, T vj = 125°C
IF = 1200A, - diF/dt = 7200A/µsec
VR = 900V, VGE = -10V, T vj = 25°C
VR = 900V, VGE = -10V, T vj = 125°C
IF = 1200A, - diF/dt = 7200A/µsec
VR = 900V, VGE = -10V, T vj = 25°C
VR = 900V, VGE = -10V, T vj = 125°C
min. typ. max.
VF
2,1 2,5
V
2,1 2,5
V
IRM 970 A
1130
A
Qr 200 µAs
380 µAs
Erec 110 mWs
210 mWs
2(8)
FZ1200R17KF6CB2_V.xls




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FZ1200R17KF6CB2 igbt

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