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Fuji |
2MBI 150P-140
2-Pack IGBT
1400V
150A
IGBT MODULE ( P-Series )
n Features
• Square SC SOA at 10 x IC
• Simplified Parallel Connection
• Narrow Distribution of Characteristics
• High Short Circuit Withstand-Capability
n Outline Drawing
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n Maximum Ratings and Characteristics
n Equivalent Circuit
• Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings Units
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current
Continuous TC=25°C
Continuous TC=80°C
1ms TC=25°C
1ms TC=80°C
VCES
VGES
IC
IC PULSE
1400
± 20
200
150
400
300
V
V
A
Max. Power Dissipation
Operating Temperature
Storage Temperature
1ms
-IC
-IC PULSE
PC
Tj
Tstg
150
300
1100
+150
-40 ∼ +125
W
°C
°C
Isolation Voltage
Screw Torque
A.C. 1min.
Vis
Mounting *1
Terminals *2
2500
3.5
3.5
V
Nm
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
• Electrical Characteristics ( at Tj=25°C )
Items
Symbols
Zero Gate Voltage Collector Current
ICES
Gate-Emitter Leackage Current
IGES
Gate-Emitter Threshold Voltage
VGE(th)
Collector-Emitter Saturation Voltage
VCE(sat)
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
Cies
Coes
Cres
tON
tr
tOFF
tf
VF
trr
Test Conditions
VGE=0V VCE=1400V
VCE=0V VGE=± 20V
VGE=20V IC=150mA
Tj= 25°C VGE=15V IC=150A
Tj=125°C VGE=15V IC=150A
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=150A
VGE=± 15V
RG=5.6Ω
IF=150A VGE=0V
IF=150A
• Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
6.0
Typ.
8.0
2.7
3.3
15000
2000
1000
2.4
Max.
2.0
400
9.0
3.0
Units
mA
µA
V
V
pF
1.2
0.6
1.0 µs
0.3
3.3 V
350 ns
Min.
Typ.
0.025
Max.
0.11
0.24
Units
°C/W
2MBI 150P-140
2-Pack IGBT
1400V
150A
Collector Current vs. Collector-Emitter Voltage
T j= 2 5 ° C
400
300
200
100
0
0
VGE=20V 15V
12V
11V
10V
12345
Collector-Emitter Voltage : VCE [V]
6
Collector Current vs. Collector-Emitter Voltage
Tj= 1 2 5 ° C
400
300
VGE=20V 15V
12V
200
11V
100
10V
0
0123456
Collector-Emitter Voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter Voltage
T j=25°C
10
8
6
4
IC=300A
2 IC=150A
IC= 75A
0
0 5 10 15 20 25
Gate-Emitter Voltage : VGE [V]
Collector-Emitter vs. Gate-Emitter Voltage
T j= 1 2 5 ° C
10
8
6
4 IC=300A
2 IC=150A
IC= 75A
0
0 5 10 15 20 25
Gate-Emitter Voltage : VGE [V]
1000
100
Switching Time vs. Collector Current
V CC=600V, R G=5,6 Ω , V GE= ± 1 5 V , Tj= 2 5 ° C
t
on
tr
toff
tf
1000
Switching Time vs. Collector Current
V CC=600V, RG=5,6Ω , VGE= ± 1 5 V , Tj= 1 2 5 ° C
ton
tr
toff
100
tf
10
0
10
100 200 300
0
100 200 300
Collector Current: IC (A)
Collector Current: IC (A)
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