파트넘버.co.kr 2MBI100NC-120 데이터시트 PDF


2MBI100NC-120 반도체 회로 부품 판매점

IGBT MODULE ( N series )



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Fuji
2MBI100NC-120 데이터시트, 핀배열, 회로
IGBT MODULE ( N series )
n Outline Drawing
n Features
Square RBSOA
Low Saturation Voltage
Less Total Power Dissipation
Improved FWD Characteristic
Minimized Internal Stray Inductance
Overcurrent Limiting Function (4~5 Times Rated Current)
n Applications
High Power Switching
A.C. Motor Controls
D.C. Motor Controls
Uninterruptible Power Supply
n Maximum Ratings and Characteristics
n Equivalent Circuit
Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings Units
Collector-Emitter Voltage
Gate -Emitter Voltage
VCES
VGES
1200
± 20
V
V
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Continuous
1ms
Continuous
1ms
IC
IC PULSE
-IC
-IC PULSE
PC
Tj
Tstg
100
200
100
200
780
+150
-40 +125
A
W
°C
°C
Isolation Voltage
Screw Torque
A.C. 1min.
Vis
Mounting *1
Terminals *1
2500
3.5
3.5
V
Nm
Note: *1:Recommendable Value; 2.5 3.5 Nm (M5)
Electrical Characteristics ( at Tj=25°C )
Items
Symbols
Zero Gate Voltage Collector Current
ICES
Gate-Emitter Leackage Current
IGES
Gate-Emitter Threshold Voltage
VGE(th)
Collector-Emitter Saturation Voltage
VCE(sat)
Input capacitance
Cies
Output capacitance
Coes
Reverse Transfer capacitance
Cres
Turn-on Time
tON
tr
Turn-off Time
tOFF
tf
Diode Forward On-Voltage
VF
Reverse Recovery Time
trr
Test Conditions
VGE=0V VCE=1200V
VCE=0V VGE=± 20V
VGE=20V IC=100mA
VGE=15V IC=100A
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=100A
VGE=± 15V
RG=9.1
IF=100A VGE=0V
IF=100A
Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
4.5
Typ.
16000
5800
5160
0.65
0.25
0.85
0.35
Max.
2.0
30
7.5
3.3
1.2
0.6
1.5
0.5
3.0
350
Units
mA
µA
V
V
pF
µs
V
ns
Min.
Typ.
0.025
Max.
0.16
0.33
Units
°C/W


2MBI100NC-120 데이터시트, 핀배열, 회로
Collector current vs. Collector-Emitter voltage
Tj=25°C
250
VGE=20V,15V,12V,10V
200
150
100
50 8V
0
012345
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
10
8
6
4 IC=
200A
100A
2 50A
0
0
1000
5 10 15 20
Gate-Emitter voltage : VGE [V]
25
Switching time vs. Collector current
VCC=600V, RG=9.1, VGE±15V, Tj=25°C
tOFF
tON
tf
tr
100
Collector current vs. Collector-Emitter voltage
Tj=125°C
250
VGE=20V,15V,12V,10V
200
150
100
8V
50
0
012345
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
8
6
4 IC=
200A
100A
2
50A
0
0 5 10 15 20 25
Gate-Emitter voltage : VGE [V]
1000
Switching time vs. Collector current
VCC=600V, RG=9.1, VGE=±15V, Tj=125°C
tOFF
tON
tf
tr
100
10
0
50 100 150
Collector current : IC [A]
200
10
0 50 100 150 200
Collector current : IC [A]




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2MBI100NC-120 igbt

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2MBI100NC-120

IGBT MODULE ( N series ) - Fuji