파트넘버.co.kr MM118-06F 데이터시트 PDF


MM118-06F 반도체 회로 부품 판매점

3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE



Microsemi 로고
Microsemi
MM118-06F 데이터시트, 핀배열, 회로
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MM118-XX
Features
SERIES
Available in Low Conduction Loss Class as MM118-xxL or Fast
Switching Class as MM118-xxF
600 / 1200 Volts
Compact and rugged construction offering weight and space savings
Available with PC board solderable pins (see mechanical outline below)
or threaded terminals (add “T”suffix to part number, see option below)
HPM (Hermetic Power Module)
Isolation voltage capability (in reference to the base) in excess of 3kV
Very low thermal resistance
Thermally matched construction provides excellent temperature and
power cycling capability
Additional voltage ratings or terminations available upon request
150 Amps
3 PHASE N-CHANNEL
INSULATED GATE
BIPOLAR
TRANSISTOR (IGBT)
BRIDGE
Maximum Ratings per switch @ 25°C (unless otherwise specified)
PART NUMBER
SYMBOL
MM118-06 MM118-12
Collector-to-Emitter Breakdown Voltage (Gate shorted to
Emitter), @ Tj25°C
Collector-to-Gate Breakdown Voltage @ Tj25°C, RGS= 1
M
Gate-to-Emitter Voltage
continuous
transient
Continuous Collector Current
25°C
Tj=
Tj= 90°C
Peak Collector Current, pulsewidth limited by Tj max
Power Dissipation
Thermal resistance, junction to base
per switch
BVCES
600 V
1200 V
BVCGR
600 V
1200 V
VGES
VGEM
IC25
IC90
+/- 20 V
+/- 30 V
60 A
32 A
+/- 20 V
+/- 30 V
52 A
33 A
ICM
PD
RΘ jc, max
RΘ , typ
120 A
165 W
104 A
165 W
0.75°C/W
0.5°C/W
0.75°C/W
0.5°C/W
Mechanical Outline
Datasheet# MSC0321A


MM118-06F 데이터시트, 핀배열, 회로
MM-XX SERIES
Maximum Ratings @ 25°C (unless otherwise specified) - continued
DESCRIPTION
SYMBOL MM118-06 MM118-12
Short Circuit Reverse Current (RBSOA) @ Tj= 125°C, VCE= 0.8 x VCES
Junction and Storage Temperature Range (°C)
Continuous Source Current (parallel Diode)
Pulse Source Current (parallel Diode)
Imax
Tj, Tstg
IS
ISM
64 A
-55 to +150
60 A
100 A
66 A
-55 to +150
50 A
100 A
Electrical Parameters, per switch @ 25°C (unless otherwise specified)
DESCRIPTION
Collector-to-Emitter Breakdown Voltage
(Gate Shorted to Emitter)
Gate Threshold Voltage
Gate-to-Emitter Leakage Current
Collector-to-Emitter Leakage Current
(Zero Gate Voltage Collector Current)
Collector-to-Emitter Saturation Voltage
(1)
Forward Transconductance (1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
CONDITIONS
BVCES
VGS = 0 V, IC = 250 µA
VGE(th)
IGES
ICES
VCE(sat)
gfs
VCE = VGE, IC = 250 µA
VCE = VGE, IC = 2.5 mA
VCE = VGE, IC = 350 µA
VGE = ± 20VDC, VCE = 0
VCE =0.8BVCES
VGE = 0 V
VGE= 15V, IC= 30A
IC= 60A
IC= 30A
IC= 30A
VGE= 15V, IC= 25A
IC= 50A
IC= 25A
VCE 10 V; IC = 30 A
VCE 10 V; IC = 30 A
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 25°C
TJ = 25°C
TJ = 125°C
Cies VGE = 0 V, VCE = 25 V, f = 1 MHz
Coes
Cres
INDUCTIVE LOAD, Tj= 25°C (2,3)
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
td(on)
tri
Eon
td(off)
tfi
Eoff
VGE = 15 V, L= 100 µH note 2, 3
for MM118-06: VCE = 480 V,
IC = 30 A, RG = 4.7
for MM118-12: VCE= 600 V,
IC= 25 A, RG = 47
PART
MM118-06
MM118-12
MM118-06F
MM118-06L
MM118-12
(ALL)
(ALL)
MM118-06F
MM118-06F
MM118-06F
MM018-06L
MM118-12
MM118-12
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MIN
600
1200
2.5
4
4.5
15
7
8.5
TYP.
4
5.5
2.2
3.5
2.2
2.2
2.7
3.4
3.3
20
13
20
2500
2760
1650
230
240
250
70
51
110
25
60
75
30
130
65
3.6
175
400
420
125
400
45
1.3
5
2.4
MAX
5.0
7
6.5
±100
±200
200
1000
2.9
tbd
tbd
2.5
3.2
tbd
3.9
UNIT
V
V
nA
µA
V
S
tbd
tbd
2200
tbd
tbd
380
tbd
tbd
160
tbd
tbd
110
tbd
tbd
100
-
tbd
tbd
560
175
tbd
60
-
-
-
pF
ns
ns
ns
ns
ns
ns
mJ
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
Datasheet# MSC0321A




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MM118-06F igbt

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