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Microsemi |
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MM118-XX
Features
SERIES
• Available in Low Conduction Loss Class as MM118-xxL or Fast
Switching Class as MM118-xxF
600 / 1200 Volts
• Compact and rugged construction offering weight and space savings
• Available with PC board solderable pins (see mechanical outline below)
or threaded terminals (add “T”suffix to part number, see option below)
• HPM (Hermetic Power Module)
• Isolation voltage capability (in reference to the base) in excess of 3kV
• Very low thermal resistance
• Thermally matched construction provides excellent temperature and
power cycling capability
• Additional voltage ratings or terminations available upon request
150 Amps
3 PHASE N-CHANNEL
INSULATED GATE
BIPOLAR
TRANSISTOR (IGBT)
BRIDGE
Maximum Ratings per switch @ 25°C (unless otherwise specified)
PART NUMBER
SYMBOL
MM118-06 MM118-12
Collector-to-Emitter Breakdown Voltage (Gate shorted to
Emitter), @ Tj≥ 25°C
Collector-to-Gate Breakdown Voltage @ Tj≥ 25°C, RGS= 1
MΩ
Gate-to-Emitter Voltage
continuous
transient
Continuous Collector Current
25°C
Tj=
Tj= 90°C
Peak Collector Current, pulsewidth limited by Tj max
Power Dissipation
Thermal resistance, junction to base
per switch
BVCES
600 V
1200 V
BVCGR
600 V
1200 V
VGES
VGEM
IC25
IC90
+/- 20 V
+/- 30 V
60 A
32 A
+/- 20 V
+/- 30 V
52 A
33 A
ICM
PD
RΘ jc, max
RΘ , typ
120 A
165 W
104 A
165 W
0.75°C/W
0.5°C/W
0.75°C/W
0.5°C/W
Mechanical Outline
Datasheet# MSC0321A
MM-XX SERIES
Maximum Ratings @ 25°C (unless otherwise specified) - continued
DESCRIPTION
SYMBOL MM118-06 MM118-12
Short Circuit Reverse Current (RBSOA) @ Tj= 125°C, VCE= 0.8 x VCES
Junction and Storage Temperature Range (°C)
Continuous Source Current (parallel Diode)
Pulse Source Current (parallel Diode)
Imax
Tj, Tstg
IS
ISM
64 A
-55 to +150
60 A
100 A
66 A
-55 to +150
50 A
100 A
Electrical Parameters, per switch @ 25°C (unless otherwise specified)
DESCRIPTION
Collector-to-Emitter Breakdown Voltage
(Gate Shorted to Emitter)
Gate Threshold Voltage
Gate-to-Emitter Leakage Current
Collector-to-Emitter Leakage Current
(Zero Gate Voltage Collector Current)
Collector-to-Emitter Saturation Voltage
(1)
Forward Transconductance (1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
CONDITIONS
BVCES
VGS = 0 V, IC = 250 µA
VGE(th)
IGES
ICES
VCE(sat)
gfs
VCE = VGE, IC = 250 µA
VCE = VGE, IC = 2.5 mA
VCE = VGE, IC = 350 µA
VGE = ± 20VDC, VCE = 0
VCE =0.8•BVCES
VGE = 0 V
VGE= 15V, IC= 30A
IC= 60A
IC= 30A
IC= 30A
VGE= 15V, IC= 25A
IC= 50A
IC= 25A
VCE ≥ 10 V; IC = 30 A
VCE ≥ 10 V; IC = 30 A
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 25°C
TJ = 25°C
TJ = 125°C
Cies VGE = 0 V, VCE = 25 V, f = 1 MHz
Coes
Cres
INDUCTIVE LOAD, Tj= 25°C (2,3)
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
td(on)
tri
Eon
td(off)
tfi
Eoff
VGE = 15 V, L= 100 µH note 2, 3
for MM118-06: VCE = 480 V,
IC = 30 A, RG = 4.7 Ω
for MM118-12: VCE= 600 V,
IC= 25 A, RG = 47 Ω
PART
MM118-06
MM118-12
MM118-06F
MM118-06L
MM118-12
(ALL)
(ALL)
MM118-06F
MM118-06F
MM118-06F
MM018-06L
MM118-12
MM118-12
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MIN
600
1200
2.5
4
4.5
15
7
8.5
TYP.
4
5.5
2.2
3.5
2.2
2.2
2.7
3.4
3.3
20
13
20
2500
2760
1650
230
240
250
70
51
110
25
60
75
30
130
65
3.6
175
400
420
125
400
45
1.3
5
2.4
MAX
5.0
7
6.5
±100
±200
200
1000
2.9
tbd
tbd
2.5
3.2
tbd
3.9
UNIT
V
V
nA
µA
V
S
tbd
tbd
2200
tbd
tbd
380
tbd
tbd
160
tbd
tbd
110
tbd
tbd
100
-
tbd
tbd
560
175
tbd
60
-
-
-
pF
ns
ns
ns
ns
ns
ns
mJ
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
Datasheet# MSC0321A
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