7MBR75SB060 반도체 회로 부품 판매점

IGBT(600V/75A/PIM)



Fuji Electric 로고
Fuji Electric
7MBR75SB060 데이터시트, 핀배열, 회로
7MBR75SB060
IGBT MODULE (S series)
600V / 75A / PIM
IGBT Modules
Features
· Low VCE(sat)
· Compact package
· P.C. board mount
· Converter diode bridge, Dynamic brake circuit
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Symbol
Collector-Emitter voltage
Gate-Emitter voltage
VCES
VGES
Collector current
IC
ICP
Collector power dissipation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
-IC
PC
VCES
VGES
IC
Collector power dissipation
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
ICP
PC
VRRM
VRRM
IO
IFSM
I2t
Operating junction temperature
Tj
Storage temperature
Tstg
Isolation between terminal and copper base *2 Viso
voltage between thermistor and others *3
Mounting screw torque
Condition
Continuous
1ms
1 device
Continuous
1ms
1 device
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24
should be connected together and shorted to copper base.
Rat ing
600
±20
75
150
75
300
600
±20
50
100
200
600
800
75
525
1378
+150
-40 to +125
AC 2500
AC 2500
3.5 *1
Unit
V
V
A
A
A
W
V
V
A
A
W
V
V
A
A
A2s
°C
°C
V
V
N·m

7MBR75SB060 데이터시트, 핀배열, 회로
IGBT Modules
7MBR75SB060
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Condition
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
tr
tr(i)
toff
tf
VF
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
VFM
IRRM
R
B
VCE=600V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=75mA
VGE=15V, Ic=75A chip
terminal
VGE=0V, VCE=10V, f=1MHz
VCC=300V
IC=75A
VGE=±15V
RG=33
IF=75A
chip
terminal
IF=75A
VCES=600V, VGE=0V
VCE=0V, VGE=±20V
IC=50A, VGE=15V chip
terminal
VCC=300V
IC=50A
VGE=±15V
RG=51
VR=600V
IF=75A
chip
terminal
VR=800V
T=25°C
T=100°C
T=25/50°C
Characteristics
Min.
Typ.
Max.
1.0
0.2
5.5 7.8
8.5
1.8
2.1 2.55
7500
0.45 1.2
0.25 0.6
0.08
0.40 1.0
0.05 0.35
1.7
2.0 2.7
0.3
1.0
0.2
1.8
2.05 2.5
0.45 1.2
0.25 0.6
0.40 1.0
0.05 0.35
1.0
1.1
1.2 1.5
1.0
5000
465 495
520
3305
3375
3450
Unit
mA
µA
V
V
pF
µs
V
µs
mA
µA
V
µs
mA
V
mA
K
Thermal resistance Characteristics
Item
Symbol
Condition
Inverter IGBT
Thermal resistance ( 1 device )
Rth(j-c)
Inverter FWD
Brake IGBT
Converter Diode
Contact thermal resistance *
Rth(c-f)
With thermal compound
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Min.
Characteristics
Typ.
Max.
0.42
0.90
0.63
0.70
0.05
Unit
°C/W
Equivalent Circuit Schematic
[Converter]
21(P)
[B rake]
2 2 (P 1 )
20(G u)
[In v e r te r ]
18(G v)
16(G w)
[Thermistor]
89
1(R)
2(S) 3(T)
19(Eu)
17(Ev)
15(Ew)
7(B)
4(U)
5(V)
6(W )
23(N)
14(G b)
2 4 (N 1 )
13(G x)
12(G y)
11(G z)
1 0 (E n )




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7MBR75SB060 igbt

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