7MBR35SB140 반도체 회로 부품 판매점
IGBT MODULE
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 Fuji Electric |
7MBR35SB140
IGBT MODULE (S series)
1400V / 35A / PIM
IGBT Modules
Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Symbol
VCES
VGES
IC
ICP
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
-IC
PC
VCES
VGES
IC
ICP
Collector power disspation
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
Operating junction temperature
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
PC
VRRM
VRRM
IO
IFSM
I2t
Tj
Tstg
Viso
Condition
Continuous
1ms
Tc=25°C
Tc=75°C
Tc=25°C
Tc=75°C
1 device
Continuous
1ms
1 device
Tc=25°C
Tc=75°C
Tc=25°C
Tc=75°C
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24
should be connected together and shorted to copper base.
Rating
1400
±20
50
35
100
70
35
240
1400
±20
35
25
70
50
180
1400
1600
35
360
648
+150
-40 to +125
AC 2500
AC 2500
3.5 *1
Unit
V
V
A
A
A
W
V
V
A
A
W
V
V
A
A
A2s
°C
°C
V
N·m
IGBT Module
7MBR35SB140
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Condition
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
tr
tr(i)
toff
tf
VF
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
VFM
IRRM
R
B
VCE=1400V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=35mA
VGE=15V, Ic=35A chip
terminal
VGE=0V, VCE=10V, f=1MHz
VCC=800V
IC=35A
VGE=±15V
RG=33Ω
IF=35A
chip
terminal
IF=35A
VCES=1400V, VGE=0V
VCE=0V, VGE=±20V
IC=25A, VGE=15V chip
terminal
VCC=800V
IC=25A
VGE=±15V
RG=51Ω
VR=1400V
IF=35A
chip
terminal
VR=1600V
T=25°C
T=100°C
T=25/50°C
Characteristics
Min.
Typ.
Max.
1.0
0.2
5.5 7.2
8.5
2.2
2.35 2.7
4200
0.35 1.2
0.25 0.6
0.1
0.45 1.0
0.08
0.3
2.4
2.55
3.4
0.35
1.0
0.2
2.2
2.35
2.8
0.35 1.2
0.25 0.6
0.45 1.0
0.08 0.3
1.0
1.1
1.2 1.5
1.0
5000
465 495
520
3305
3375
3450
Unit
mA
µA
V
V
pF
µs
V
µs
mA
µA
V
µs
mA
V
mA
Ω
K
Thermal resistance Characteristics
Item
Symbol
Condition
Inverter IGBT
Thermal resistance ( 1 device )
Rth(j-c)
Inverter FWD
Brake IGBT
Converter Diode
Contact thermal resistance *
Rth(c-f)
With thermal compound
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
Min.
Characteristics
Typ.
Max.
0.52
0.90
0.69
0.75
0.05
Unit
°C/W
[Converter]
1(R) 2(S) 3(T)
21(P)
[Brake]
22(P1)
20(Gu)
[Inverter]
18(Gv)
16(Gw)
[Thermistor]
89
7(B)
19(Eu)
17(Ev)
4(U)
15(Ew)
5(V)
6(W)
23(N)
14(Gb)
24(N1)
13(Gx)
12(Gy)
11(Gz)
10(En)
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제조업체: Fuji Electric
( fuji )
7MBR35SB140 igbt
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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