7MBR30NE060 반도체 회로 부품 판매점

IGBT(600V/30A/PIM)



Fuji Electric 로고
Fuji Electric
7MBR30NE060 데이터시트, 핀배열, 회로
7MBR30NE060
IGBT MODULE
600V / 30A / PIM
IGBT Modules
Features
· High Speed Switching
· Voltage Drive
· Low Inductance Module Structure
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage
Average forward current
Surge current
Repetitive peak reverse voltage
Non-Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I²t (Non-Repetitive)
Symbol
VCES
VGES
IC
ICP
-IC
PC
VCES
VGES
IC
ICP
PC
VRRM
IF(AV)
IFSM
VRRM
VRSM
IO
IFSM
Operating junction temperature
Storage temperature
Isolation voltage
Mounting screw torque
Tj
Tstg
Viso
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
Condition
Continuous
1ms
1 device
Continuous
1ms
1 device
10ms
50Hz/60Hz sine wave
Tj=150°C, 10ms
Tj=150°C, 10ms
AC : 1 minute
Ra ting
600
±20
30
60
30
120
600
±20
30
60
120
600
1
50
800
900
50
350
648
+150
-40 to +125
AC 2500
1.7 *1
Unit
V
V
A
A
A
W
V
V
A
A
W
V
A
A
V
V
A
A
A²s
°C
°C
V
N·m

7MBR30NE060 데이터시트, 핀배열, 회로
IGBT Module
7MBR30NE060
Electrical characteristics (Tj=25°C unless without specified)
Item
Symbol
Condition
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Collector-Emitter voltage
Input capacitance
Switching time
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Switching time
Reverse current
Reverse recovery time
Forward voltage
Reverse current
ICES
IGES
VGE(th)
VCE(sat)
-VCE
Cies
ton
tr
toff
tf
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
trr
VFM
IRRM
VCE=600V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=30mA
VGE=15V, Ic=30A
-Ic=30A
VGE=0V, VCE=10V, f=1MHz
VCC=300V
IC=30A
VGE=±15V
RG=82 ohm
IF=30A
VCES=600V, VGE=0V
VCE=0V, VGE=±20V
IC=30A, VGE=15V
VCC=300V
IC=30A
VGE=±15V
RG=82ohm
VR=600V
IF=50A
VR=800V
Characteristics
Min.
Typ.
Max.
1.0
20
4.5 7.5
2.8
1980
3.0
1.2
0.6
1.0
0.35
0.3
1.0
0.1
2.8
0.8
0.6
1.0
0.35
1.0
0.6
1.55
1.0
Unit
mA
µA
V
V
V
pF
µs
µs
µs
µs
µs
mA
µA
V
µs
µs
µs
µs
mA
µs
V
mA
Thermal Characteristics
Item
Symbol
Condition
Inverter IGBT
Thermal resistance ( 1 device )
Rth(j-c)
Inverter FRD
Brake IGBT
Converter Diode
Contact thermal resistance *
Rth(c-f)
With thermal compound
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Min.
Characteristics
Typ.
Max.
1.04
2.22
1.04
2.10
0.05
Unit
°C/W
Equivalent Circuit Schematic
* NLU (Over current Limiting circuit)




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7MBR30NE060 igbt

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전화번호 : 051-319-2877

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7MBR30NE060

IGBT(600V/30A/PIM) - Fuji Electric