파트넘버.co.kr 7MBR25NE120 데이터시트 PDF


7MBR25NE120 반도체 회로 부품 판매점

IGBT (1200V/25A/PIM)



Fuji Electric 로고
Fuji Electric
7MBR25NE120 데이터시트, 핀배열, 회로
7MBR25NE120
IGBT MODULE
1200V / 25A / PIM
IGBT Modules
Features
· High Speed Switching
· Voltage Drive
· Low Inductance Module Structure
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage
Average forward current
Surge current
Repetitive peak reverse voltage
Non-Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I²t (Non-Repetitive)
Symbol
VCES
VGES
IC
ICP
-IC
PC
VCES
VGES
IC
ICP
PC
IF(AV)
IFSM
VRRM
VRSM
IO
IFSM
Operating junction temperature
Storage temperature
Isolation voltage
Mounting screw torque
Tj
Tstg
Viso
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
Condition
Continuous
1ms
1 device
Continuous
1ms
1 device
10ms
50Hz/60Hz sine wave
Tj=150°C, 10ms
Tj=150°C, 10ms
AC : 1 minute
Ra ting
1200
±20
25
50
25
200
1200
±20
15
30
120
1200
1
50
1600
1700
25
320
512
+150
-40 to +125
AC 2500
1.7 *1
Unit
V
V
A
A
A
W
V
V
A
A
W
V
A
A
V
V
A
A
A²s
°C
°C
V
N·m


7MBR25NE120 데이터시트, 핀배열, 회로
IGBT Module
7MBR25NE120
Electrical characteristics (Tj=25°C unless without specified)
Item
Symbol
Condition
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Collector-Emitter voltage
Input capacitance
Switching time
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Switching time
Reverse current
Reverse recovery time
Forward voltage
Reverse current
ICES
IGES
VGE(th)
VCE(sat)
-VCE
Cies
ton
tr
toff
tf
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
trr
VFM
IRRM
VCE=1200V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=25mA
VGE=15V, Ic=25A
-Ic=25A
VGE=0V, VCE=10V, f=1MHz
VCC=600V
IC=25A
VGE=±15V
RG=51 ohm
IF=25A
VCES=1200V, VGE=0V
VCE=0V, VGE=±20V
IC=15A, VGE=15V
VCC=600V
IC=15A
VGE=±15V
RG=82 ohm
VR=1200V
IF=25A
VR=1600V
Characteristics
Min.
Typ.
Max.
1.0
20
4.5 7.5
3.3
4000
3.0
1.2
0.6
1.5
0.5
0.35
1.0
0.1
3.3
0.8
0.6
1.5
0.5
1
0.6
1.4
1.0
Unit
mA
µA
V
V
V
pF
µs
µs
µs
µs
µs
mA
µA
V
µs
µs
µs
µs
mA
µs
V
mA
Thermal Characteristics
Item
Symbol
Condition
Inverter IGBT
Thermal resistance ( 1 device )
Rth(j-c)
Inverter FRD
Brake IGBT
Converter Diode
Contact thermal resistance *
Rth(c-f)
With thermal compound
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Min.
Characteristics
Typ.
Max.
0.63
1.70
1.04
3.40
0.05
Unit
°C/W
Equivalent Circuit Schematic
* NLU (Over current Limiting circuit)




PDF 파일 내의 페이지 : 총 9 페이지

제조업체: Fuji Electric

( fuji )

7MBR25NE120 igbt

데이터시트 다운로드
:

[ 7MBR25NE120.PDF ]

[ 7MBR25NE120 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


7MBR25NE120

IGBT (1200V/25A/PIM) - Fuji Electric