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Toshiba |
TOSHIBA GTR Module Silicon N Channel IGBT
MG150Q2YS51
MG150Q2YS51
High Power Switching Applications
Motor Control Applications
Unit: mm
l High input impedance
l High speed : tf = 0.3µs (Max)
@Inductive Load
l Low saturation voltage
: VCE (sat) = 3.6V (Max)
l Enhancement-mode
l Includes a complete half bridge in one package.
l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
JEDEC
EIAJ
TOSHIBA
Weight: 430g
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1ms
Forward current
DC
1ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES
VGES
IC
(25°C / 80°C)
ICP
(25°C / 80°C)
IF
IFM
PC
Tj
Tstg
VIsol
―
Rating
1200
±20
200 / 150
400 / 300
150
300
1250
150
−40 ~ 125
2500
(AC 1 min.)
3/3
Unit
V
V
A
A
W
°C
°C
V
N·m
―
―
2-109C4A
1 2001-04-16
MG150Q2YS51
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Forward voltage
Turn-on delay time
Rise time
Turn-on time
Turn-off delay time
Fall time
Turn-off time
Reverse recovery time
Thermal resistance
IGES
ICES
VGE (off)
VCE (sat)
Cies
td(on)
tr
ton
td(off)
tf
toff
VF
trr
Rth (j-c)
VGE = ±20V, VCE = 0
VCE = 1200V, VGE = 0
IC = 150mA, VCE = 5V
IC = 150A,
VGE = 15V
Tj = 25°C
Tj = 125°C
VCE = 10V, VGE = 0, f = 1MHz
Inductive load
VCC = 600V
IC = 150A
VGE = ±15V
RG = 5.6Ω
(Note 1)
IF = 150A, VGE = 0
IF = 150A, VGE = −10V
di / dt = 700A / µs
Transistor stage
Diode stage
(Note 1)
―
―
3.0
―
―
―
―
―
―
―
―
―
―
―
―
―
Note 1: Switching time and reverse recovery time test circuit & timing chart
Typ. Max Unit
― ±500 nA
― 2.0 mA
― 6.0 V
2.8 3.6
3.1 4.0
V
18.0 ―
nF
0.05 ―
0.05 ―
0.2 ―
µs
0.5 ―
0.1 0.3
0.6 ―
2.4 3.5
V
0.1 0.25 µs
― 0.1
°C / W
― 0.24
2 2001-04-16
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