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MG1200FXF1US51 반도체 회로 부품 판매점

TOSHIBA GTR Module Silicon N-Channel IGBT



Toshiba 로고
Toshiba
MG1200FXF1US51 데이터시트, 핀배열, 회로
MG1200FXF1US51
Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT
MG1200FXF1US51
High Power Switching Applications
Motor Control Applications
· High input impedance
· Enhancement mode
· Electrodes are isolated from case.
Equivalent Circuit
C CC
C
G
E
E EE
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Peak 1 cycle surge current 10 ms (half sine)
Operating junction temperature
Storage temperature range
Isolation voltage
Terminal: M4/M8
Screw torque
Mounting
VCES
VGES
IC
ICP
IFSM
Tj
Tstg
VIsol
¾
3300
±20
1200
2400
10
-40~125
-40~125
6000 (AC 1 min)
2/7
4
V
V
A
A
kA
°C
°C
V
Nm
Caution: MG1200FXF1US51 has no short-circuit capability.
1 2001-09-05


MG1200FXF1US51 데이터시트, 핀배열, 회로
MG1200FXF1US51
Electrical Characteristics (Tvj = 125°C)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Forward voltage of diode
Reverse recovery charge
Peak reverse recovery current
turn-on loss
Switching dissipation turn-off loss
Diode reverse
recovery loss
Symbol
Test Condition
Min Typ. Max Unit
IGES
ICES
VGE (off)
VCE (sat)
Cies
tr
ton
tf
toff
VF
Qrr
Irr
Eon
Eoff
Edsw
VGE = ±20 V, VCE = 0 V
VCE = 3300 V, VGE = 0 V
VCE = 5 V, IC = 1.2 A
IC = 1200 A, VGE = 15 V
VCE = 10 V, VGE = 0 V, f = 100 kHz
VCC = 1800 V, IC = 1200 A,
VGG = ±15 V, CGE = 0.1 mF,
RG (on)/(off) = 3.9/3.3 W
(dic/dt (on) ~- 4900 A/ms)
(Inductive load, Ls ~- 160 nH)
IF = 1200 A, VGE = 0 V
IF = 1200 A, VGG = -15 V,
diF/dt ~- -4900 A/ms,
VCC = 1800 V
VCC = 1800 V, IC = 1200 A,
VGG = ±15 V, CGE = 0.1 mF,
RG (on)/(off) = 3.9/3.3 W
(dic/dt (on) ~- 4900 A/ms)
(Inductive load, Ls ~- 160 nH)
IF = 1200 A, VGG = -15 V,
diF/dt ~- -4900 A/ms,
VCC = 1800 V
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
75
4.4
4.6
230
2.1
0.3
4.0
1.8
3.5
1000
±50
100
¾
5.3
¾
¾
¾
¾
¾
4.0
¾
1500 ¾
2.2 2.8
2.0 3.0
1.0 1.5
nA
mA
V
V
nF
ms
ms
ms
ms
V
mC
A
J
J
J
Thermal Resistance (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Thermal Resistance
Rth (j-c)
Rth (c-f)
Transistor (IGBT) stage
Diode stage
Per module
(Note 1)
¾
¾
¾
¾ 8.0
¾ 16.0 °C/kW
6.0 ¾
Note 1: Toshiba silicone’s YG6260 heat radiation grease is recommended for use with semiconductor devices.
Apply a thin, even (100-to-200-mm) coating of grease.
2 2001-09-05




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MG1200FXF1US51 igbt

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TOSHIBA GTR Module Silicon N-Channel IGBT - Toshiba