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QIC0620003 반도체 회로 부품 판매점

Dual IGBT Common Emitter Module (200 Amp/600 Volts)



Powerex Power Semiconductors 로고
Powerex Power Semiconductors
QIC0620003 데이터시트, 핀배열, 회로
Preliminary
QIC0620003
200 Amp/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBT Common Emitter Module
200 Amp/600 Volts
Description:
Powerex Fast Recovery Diode
Modules are designed for use in
applications requiring fast switching.
The modules are isolated for easy
mounting with other components on a
common heatsink.
QIC0620003
Dual IGBT Module
Common Emitter
200 Amperes / 600 Volts
Features:
Isolated Mounting
Isolation Material - DBC Alumina
Low Drive Power
Internal Series Gate Resistors
Super-Fast FWD (110ns)
Copper Baseplate
2500 V isolating voltage
Dimensions
A
B
C
D
E
F
G
H
J
K
L
Inches
3.70
1.34
1.18
3.15
0.67
0.28
0.67
0.91
0.91
M6X1.0
DIA 0.256
Millimeters
94
34
30
80
17
6.99
17.1
23
23
M6X1.0
DIA. 6.5


QIC0620003 데이터시트, 핀배열, 회로
Preliminary
QIC0620003
200 Amp/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBT Common Emitter Module
200 Amp/600 Volts
Maximum Ratings, Tj=25°C unless otherwise specified
Ratings
Symbol
QIC0620003
Collector Emitter Voltage
VCES
600
Gate Emitter Voltage
VGES
±20
Collector Current
IC 200
Peak Collector Current
ICM 400*
Diode Forward Current
IF 50
Diode Forward Surge Current
IFM 500
Junction Temperature
Tj -40 to 150
Storage Temperature
Tstg -40 to 125
Mounting Torque, M6 Terminal Screws
- 40
Mounting Torque, M6 Mounting Screws
- 40
Module Weight (Typical)
- 200
V Isolation
VRMS
2500
*Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Units
Volts
Volts
Amperes
Amperes
Amperes
Amperes
°C
°C
In-lb
In-lb
Grams
Volts
Static Electrical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol Test Conditions Min.
Collector Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
ICES
IGES
VGE(th)
VCE(sat)
QG
VFM
VCE=VCES VGE=0V
VGE=VGES VCE=0V
IC=20mA, VCE=10V
IC=200A, VGE=15V
IC=200A, VGE=15V,
Tj=150°C
VCC=300V,
IC=200A, VGS=15V
IF=50A, VGS=0V
-
-
4.5
-
-
-
-
Typ.
-
-
6.0
2.1
2.15
600
-
Max.
1.0
0.5
7.5
2.8
-
-
2.8
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Dynamic Electrical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay time
Rise Time
Turn- off Delay Time
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Symbol
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
Test Conditions
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=200A
VGE1=VGE2=15V
RG=3.1
IF=50A
diF/dt=-100A/µS
Min.
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
0.37
Max.
20
7
4
200
550
300
300
110
-
Thermal and Mechanical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol Test Conditions Min. Typ.
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance, Thermal Grease
Applied
RθJC
RθJC
RθCF
Per IGBT
Per Diode
Per Module
- 0.14
- 0.70
--
Max.
TBD
TBD
0.075
Units
nF
nF
ns
ns
ns
ns
ns
ns
µC
Units
°C/W
°C/W
°C/W




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QIC0620003 igbt

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