FGB30N6S2D 반도체 회로 부품 판매점

600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode



Fairchild Semiconductor 로고
Fairchild Semiconductor
FGB30N6S2D 데이터시트, 핀배열, 회로
July 2001
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
General Description
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are
Low Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge and plateau voltage and ava-
lanche capability (UIS). These LGC devices shorten delay
times, and reduce the power requirement of the gate drive.
These devices are ideally suited for high voltage switched
mode power supply applications where low conduction
loss, fast switching times and UIS capability are essential.
SMPS II LGC devices have been specially designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
IGBT formerly Developmental Type TA49336
Diode formerly Developmental Type TA49390
Features
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 23nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
Package
JEDEC STYLE TO-247
Symbol
E
C
JEDEC STYLE TO-220AB
G EC G
JEDEC STYLE TO-263AB
CG
C
G
E
E
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
BVCES Collector to Emitter Breakdown Voltage
600 V
IC25 Collector Current Continuous, TC = 25°C
45 A
IC110
Collector Current Continuous, TC = 110°C
20 A
ICM Collector Current Pulsed (Note 1)
108 A
VGES
Gate to Emitter Voltage Continuous
±20 V
VGEM Gate to Emitter Voltage Pulsed
±30 V
SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2
60A at 600V
EAS Pulsed Avalanche Energy, ICE = 12A, L = 2mH, VDD = 50V
150 mJ
PD Power Dissipation Total TC = 25°C
167 W
Power Dissipation Derating TC > 25°C
1.33
W/°C
TJ Operating Junction Temperature Range
-55 to 150
°C
TSTG
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A

FGB30N6S2D 데이터시트, 핀배열, 회로
Package Marking and Ordering Information
Device Marking
30N6S2D
30N6S2D
30N6S2D
Device
FGB30N6S2D
FGP30N6S2D
FGH30N6S2D
Package
TO-263AB
TO-220AB
TO-247
Tape Width
24mm
-
Quantity
800
-
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
BVCES
ICES
IGES
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Gate to Emitter Leakage Current
IC = 250µA, VGE = 0
VCE = 600V TJ = 25°C
TJ = 125°C
VGE = ± 20V
600
-
-
-
- -V
- 250 µA
- 2 mA
- ±250 nA
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage
VEC Diode Forward Voltage
IC = 12A,
VGE = 15V
IEC = 12A
TJ = 25°C
TJ = 125°C
-
-
-
1.95 2.5
1.8 2.0
2.1 2.5
V
V
V
Dynamic Characteristics
QG(ON) Gate Charge
VGE(TH) Gate to Emitter Threshold Voltage
VGEP Gate to Emitter Plateau Voltage
IC = 12A,
VCE = 300V
VGE = 15V
VGE = 20V
-
-
23 29 nC
26 33 nC
IC = 250µA, VCE = 600V
3.5 4.3 5.0
V
IC = 12A, VCE = 300V
- 6.5 8.0 V
Switching Characteristics
SSOA Switching SOA
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
trr
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Diode Reverse Recovery Time
TJ = 150°C, RG = 10Ω, VGE =
15V, L = 100µH, VCE = 600V
IGBT and Diode at TJ = 25°C,
ICE =12A,
VCE = 390V,
VGE = 15V,
RG =10
L = 500µH
Test Circuit - Figure 26
IGBT and Diode at TJ = 125°C
ICE = 12A,
VCE = 390V,
VGE = 15V,
RG = 10
L = 500µH
Test Circuit - Figure 26
IEC = 12A, dIEC/dt = 200A/µs
IEC = 1A, dIEC/dt = 200A/µs
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
--
6-
10 -
40 -
53 -
55 -
110 -
100 150
11 -
17 -
73 100
90 100
55 -
160 200
250 350
35 46
25 32
A
ns
ns
ns
ns
µJ
µJ
µJ
ns
ns
ns
ns
µJ
µJ
µJ
ns
ns
Thermal Characteristics
RθJC
NOTE:
Thermal Resistance Junction-Case
IGBT
Diode
- - 0.75 °C/W
- - 2.0 °C/W
2ao.sfVtthaheleueIIGGsBBfoTTr.otTwnhloye.TEduOironNd-2Oeinstytlpohesesistucsronpn-edocintiifoileondsssianwrfehigesunhroeaw2tny6p.foicratlhdeiocdoenvisenuiseendceinotfhtehetecsitrccuirictuditeasnigdnethr.eEdOioNd1eisisthaet
turn-on loss
the same TJ
3tJh.EeTDuiErnnpC-uOStfftpauEnlnsdeearrgadynNdLooe.sn2sd4i(-nE1gOMaFeFt )tthhioseddpfeoofirinnMtewdeahasesuretrhetemheienntcetogollrfeaPcl otoowfretchrueDrrienevsnittcaeenqTtauunarenlso-OuzesffrpSoow(wIiCtecErhi=lnogs0sALso).tsaAsr.ltliTndhgeisvaitcteethsstewmtreeartiehlinotgedspeterdodgdepueocr-f
es the true total Turn-Off Energy Loss.
©2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A




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600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode - Fairchild Semiconductor