FGB30N6S2 반도체 회로 부품 판매점

600V/ SMPS II Series N-Channel IGBT



Fairchild Semiconductor 로고
Fairchild Semiconductor
FGB30N6S2 데이터시트, 핀배열, 회로
August 2003
FGH30N6S2 / FGP30N6S2 / FGB30N6S2
600V, SMPS II Series N-Channel IGBT
General Description
Features
The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs combin-
ing the fast switching speed of the SMPS IGBTs along with
lower gate charge and plateau voltage and avalanche capa-
bility (UIS). These LGC devices shorten delay times, and
reduce the power requirement of the gate drive. These de-
vices are ideally suited for high voltage switched mode pow-
er supply applications where low conduction loss, fast
switching times and UIS capability are essential. SMPS II
LGC devices have been specially designed for:
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 23nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
Formerly Developmental Type TA49367.
Package
TO-247
E
C
G
TO-220AB
E
C
G
TO-263AB
Symbol
C
COLLECTOR
(Back-Metal)
G
G
E
E
COLLECTOR
(Flange)
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
BVCES Collector to Emitter Breakdown Voltage
600 V
IC25 Collector Current Continuous, TC = 25°C
45 A
IC110
Collector Current Continuous, TC = 110°C
20 A
ICM Collector Current Pulsed (Note 1)
108 A
VGES
Gate to Emitter Voltage Continuous
±20 V
VGEM Gate to Emitter Voltage Pulsed
±30 V
SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2
60A at 600V
EAS Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V
150 mJ
PD Power Dissipation Total TC = 25°C
167 W
Power Dissipation Derating TC > 25°C
1.33
W/°C
TJ Operating Junction Temperature Range
-55 to 150
°C
TSTG
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A1

FGB30N6S2 데이터시트, 핀배열, 회로
Package Marking and Ordering Information
Device Marking
30N6S2
30N6S2
30N6S2
30N6S2
Device
FGH30N6S2
FGP30N6S2
FGB30N6S2
FGB30N6S2T
Package
TO-247
TO-220AB
TO-263AB
TO-263AB
Reel Size
Tube
Tube
Tube
330mm
Tape Width
N/A
N/A
N/A
24mm
Quantity
30 Units
50 Units
50 Units
800 Units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
BVCES
BVECS
ICES
IGES
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Gate to Emitter Leakage Current
IC = 250µA, VGE = 0
IC = -10mA, VGE = 0
VCE = 600V TJ = 25°C
TJ = 125°C
VGE = ± 20V
600
20
-
-
-
- -V
- -V
- 100 µA
- 2 mA
- ±250 nA
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage
IC = 12A,
VGE = 15V
TJ = 25°C
TJ = 125°C
-
-
2.0 2.5
1.7 2.0
V
V
Dynamic Characteristics
QG(ON) Gate Charge
VGE(TH)
VGEP
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
IC = 12A,
VCE = 300V
VGE = 15V
VGE = 20V
-
-
23 29 nC
26 33 nC
IC = 250µA, VCE = 600V
3.5 4.3 5.0
V
IC = 12A, VCE = 300V
-
6.5 8.0
V
Switching Characteristics
SSOA Switching SOA
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
TJ = 150°C, RG = 10Ω, VGE =
15V, L = 100µH, VCE = 600V
IGBT and Diode at TJ = 25°C,
ICE = 12A,
VCE = 390V,
VGE = 15V,
RG = 10
L = 200µH
Test Circuit - Figure 20
IGBT and Diode at TJ = 125°C
ICE = 12A,
VCE = 390V,
VGE = 15V,
RG = 10
L = 200µH
Test Circuit - Figure 20
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
--
6-
10 -
40 -
53 -
55 -
110 -
100 150
11 -
17 -
73 100
90 100
55 -
160 200
250 350
A
ns
ns
ns
ns
µJ
µJ
µJ
ns
ns
ns
ns
µJ
µJ
µJ
Thermal Characteristics
RθJC Thermal Resistance Junction-Case
- - 0.75 °C/W
NOTE:
a2o.sfVtthaheleueIIGGsBBfoTTr.otTwnhloye.TEduOironNd-2Oeinstytlpohesesistucsronpn-edocintiifoileondsssianwrfehigesunhroeaw2tny0p.foicratlhdeiocdoenvisenuiseendceinotfhtehteecsitrccuirictuditeasingdnethr.eEdOioNd1eisisthaet
turn-on loss
the same TJ
3tJh.EeTDuirEnnpC-uOStfptfauEnlnsdeearrgadynNdLooe.sn2sd4i(-nE1gOMaFeFt )tthhioseddpfeoofirinnMtewdeahasesurerthetemheienntcetogollrfeaPclotoowfretchrueDrrienevsnittcaeenqTtauunarnels-oOuzefsfrSpoow(wIiCtecErhi=lnogs0sALos).tsaAsr.ltliTndhgeivsaictteethsstewmtreeartiehlinotegdspeterdodgdepueocr-f
es the true total Turn-Off Energy Loss.
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1




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