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NGTB15N60R2FG 반도체 회로 부품 판매점

IGBT



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ON Semiconductor
NGTB15N60R2FG 데이터시트, 핀배열, 회로
NGTB15N60R2FG
IGBT
600V, 14A, N-Channel
www.onsemi.com
Features
Reverse Conducting II IGBT
IGBT VCE(sat)=1.85V typ. (IC=15A, VGE=15V)
IGBT tf=75ns typ.
Diode VF=1.7V typ. (IF=15A)
Diode trr=95ns typ.
10s Short Circuit Capability
Applications
General Purpose Inverter
Electrical Connection
N-Channel
2
1
1:Gate
2:Collector
3:Emitter
3
Specifications
Absolute Maximum Ratings at Ta = 25C, Unless otherwise specified
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current (DC)
Limited by Tjmax
@Tc=25C *2
@Tc=100C *2
Collector Current (Peak)
Pulse width Limited by Tjmax
Diode Average Output Current
Power Dissipation
Tc=25C (Our ideal heat dissipation condition) *2
Junction Temperature
Storage Temperature
Symbol
VCES
VGES
IC *1
ICP
IO
PD
Tj
Tstg
Value
600
20
24
14
60
15
54
175
55 to +175
Unit
V
V
A
A
A
A
W
C
C
Note :
*1 Collector Current is calculated from the following formula.
Tjmax - Tc
IC(Tc)= Rth(j-c)×VCE(sat) (IC(Tc))
*2 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching
the device to water-cooled radiator made of aluminum.
Marking
TO-220F-3FS
GTB15N
60R2 LOTNo.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
December 2014 - Rev. 1
1
Publication Order Number :
NGTB15N60R2FG/D


NGTB15N60R2FG 데이터시트, 핀배열, 회로
NGTB15N60R2FG
Electrical Characteristics at Ta = 25C, Unless otherwise specified
Parameter
Collector to Emitter Breakdown Voltage
Collector to Emitter Cut off Current
Gate to Emitter Leakage Current
Gate to Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
Forward Diode Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-ON Time
Turn-OFF Delay Time
Fall Time
Turn-OFF Time
Turn-ON Energy
Turn-OFF Energy
Total Gate Charge
Gate to Emitter Charge
Gate to Collector “Miller” Charge
Diode Reverse Recovery Time
Symbol
V(BR)CES
ICES
IGES
VGE(th)
VCE(sat)
VF
Cies
Coes
Cres
td(on)
tr
ton
td(off)
tf
toff
Eon
Eoff
Qg
Qge
Qgc
trr
Conditions
IC=500A, VGE=0V
VCE=600V, VGE=0V
VGE=20V, VCE=0V
VCE=20V, IC=250A
VGE=15V, IC=15A
VGE=15V, IC=14A
IF=15A
Tc=25C
Tc=125C
Tc=25C
Tc=100C
VCE=20V, f=1MHz
VCC=300V, IC=15A
RG=30, L=500H
VGE=0V/15V
Vclamp=400V
Tc=25C
See Fig.1, See Fig.2
VCE=300V, VGE=15V, IC=15A
IF=15A,di/dt=300A/s, VCC=300V, See Fig.3
min
600
Value
typ
4.5
1.85
2.0
1.7
2000
65
50
70
40
200
190
75
290
550
220
80
16
38
95
max
10
1
100
7.0
2.1
2.3
2.1
Unit
V
A
mA
nA
V
V
V
V
pF
pF
pF
ns
ns
ns
ns
ns
ns
J
J
nC
nC
nC
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Thermal Characteristics at Ta = 25C, Unless otherwise specified
Parameter
Symbol
Conditions
Thermal Resistance IGBT (Junction to Case)
Thermal Resistance (Junction to Ambient)
Rth(j-c) (IGBT)
Rth(j-a)
Tc=25C
(Our ideal heat dissipation condition) *2
Note : *2 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching
the device to water-cooled radiator made of aluminum.
Value
Unit
2.78
69
C/W
C/W
www.onsemi.com
2




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