NGTB30N120IHRWG 반도체 회로 부품 판매점
IGBT
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 ON Semiconductor |
NGTB30N120IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
Features
• Extremely Efficient Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Losses IH Cooker Application
• Reliable and Cost Effective Single Die Solution
• These are Pb−Free Devices
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax, 10 ms pulse,
VGE = 15 V
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited
by TJmax 10 ms pulse,
VGE = 0 V
Gate−emitter voltage
Transient Gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
Symbol
VCES
IC
ICM
Value
1200
60
30
120
Unit
V
A
A
IF A
60
30
IFM 120 A
VGE
$20
V
$25
PD W
384
192
TJ −40 to +175 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +175
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 A, 1200 V
VCEsat = 2.20 V
Eoff = 0.70 mJ
C
G
E
G
C
E
TO−247
CASE 340AL
MARKING DIAGRAM
30N120IHR
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
NGTB30N120IHRWG TO−247
(Pb−Free)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 1
1
Publication Order Number:
NGTB30N120IHR/D
NGTB30N120IHRWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case
Thermal resistance junction−to−ambient
Symbol
RqJC
RqJA
Value
0.39
40
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
VGE = 15 V, IC = 30 A
VGE = 15 V, IC = 30 A, TJ = 175°C
VGE = VCE, IC = 250 mA
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°C
VGE = 20 V, VCE = 0 V
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 600 V, IC = 30 A, VGE = 15 V
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
Fall time
Turn−off switching loss
TJ = 25°C
VCC = 600 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15V
Turn−off delay time
Fall time
Turn−off switching loss
TJ = 150°C
VCC = 600 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15V
DIODE CHARACTERISTIC
Forward voltage
VGE
=V0GVE,
=IF0=V3,0IFA=,
30 A
TJ = 175°C
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
Qge
Qgc
td(off)
tf
Eoff
td(off)
tf
Eoff
VF
Min
1200
−
−
4.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
−
2.20
2.40
5.5
−
−
−
5320
124
100
225
36
98
230
133
0.70
250
210
1.55
1.90
2.90
Max
−
2.50
−
6.5
0.2
2.8
100
−
−
−
−
−
−
−
−
−
−
−
−
2.35
−
Unit
V
V
V
mA
nA
pF
nC
ns
mJ
ns
mJ
V
http://onsemi.com
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NGTB30N120IHRWG igbt
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상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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