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PDF FGA15S125P Data sheet ( Hoja de datos )
| Número de pieza | FGA15S125P | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGA15S125P
1250 V, 15 A Shorted-anode IGBT
August 2013
Features
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 2.25 V @ IC = 15 A
• High Input Impedance
• RoHS Compliant
Applications
• Induction Heating, Microwave Oven
General Description
Using advanced field stop trench and shorted-anode technol-
ogy, Fairchild’s shorted-anode trench IGBTs offer superior con-
duction and switching performances for switching applications.
The device can operate in parallel configuration with excep-
tional avalanche capability . This device is designed for induc-
tion heating and microwave oven.
C
G CE
TO-3PN
G
E
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
Notes:
1: Limited by Tjmax
©2012 Fairchild Semiconductor Corporation
FGA15S125P Rev. C3
1
Ratings
1250
± 25
30
15
45
30
15
136
68
-55 to +175
-55 to +175
300
Typ.
-
-
Max.
1.1
40
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
1000
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 175oC ---
100
tr
10
7.5
td(on)
15
Collector Current, IC [A]
30
Figure 15. Switching Loss vs. Gate Resistance
10k
Common Emitter
VCC = 600V, VGE = 15V
IC = 15A
TC = 25oC
TC = 175oC ---
Eon
Eoff
1k
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 175oC ---
500
td(off)
tf
100
7.5 15
Collector Current, IC [A]
30
Figure 16. Switching Loss vs. Collector Current
10k
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 175oC ---
Eon
1k
100
10
20 30 40 50
Gate Resistance, RG [Ω]
60
70
Figure 17. Turn off Switching
SOA Characteristics
100
100 Eoff
0
7.5
15
Collector Current, IC [A]
30
Figure 18. Forward Characteristics
80
10
Safe Operating Area
VGE = 15V, TC = 175oC
1
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
10
1
0.1
0.5
TC = 25oC ---
TC = 175oC
1
Forward Voltage, VF [V]
2
©2012 Fairchild Semiconductor Corporation
FGA15S125P Rev. C3
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGA15S125P.PDF ] | |
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