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PDF FGD3245G2_F085 Data sheet ( Hoja de datos )
| Número de pieza | FGD3245G2_F085 | |
| Descripción | N-Channel Ignition IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGD3245G2_F085 / FGB3245G2_F085
EcoSPARK®2 320mJ, 450V, N-Channel Ignition IGBT
May 2014
Features
SCIS Energy = 320mJ at TJ = 25oC
Logic Level Gate Drive
Low Saturation Voltage
Qualified to AEC Q101
RoHS Compliant
Applications
Automotive lgnition Coil Driver Circuits
Coil On Plug Applications
General Description
The FGB3245G2_F085 and FGD3245G2 are N-channel
IGBTs designed in Fairchild's EcoSPARK-2 technology
which helps in eliminating external protection circuitry. The
technology is optimized for driving the coil in the harsh
environment of automotive ignition systems and offers out-
standing Vsat and SCIS Energy capability also at elevated
operating temperatures. The logic level gate input is ESD
protected and features an integrated gate resistor. An inte-
grated zener-circuitry clamps the IGBT's collecter- to-emit-
ter voltage at 450V which enables systems requiring a
higher spark voltage
Package
Symbol
JEDEC TO-263AB
D²-Pak
G
COLLECTOR
E (FLANGE)
JEDEC TO-252AA
D-Pak
COLLECTOR
G (FLANGE)
E
GATE
COLLECTOR
R1
R2
EMITTER
@2014 Fairchild Semiconductor Corporation
FGB3245G2_F085 / FGB3245G2_F085 Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Performance Curves (Continued)
40
VGE = 8.0V
VGE = 5.0V
30
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
20
10
TJ = 175oC
0
01 234
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage
vs. Collector Current
30
VGE = 5.0V
20
10
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE(oC)
Figure 9. DC Collector Current vs. Case
Temperature
10000
1000
VECS = 24V
100
10 VCES = 300V
1
0.1
-50
VCES = 250V
-25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Leakage Current vs. Junction
Temperature
40
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
30 VCE = 5V
20 TJ = 175oC
10
0
1.0
TJ = 25oC
TJ = -40oC
1.5 2.0 2.5 3.0 3.5 4.0
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
4.5
1.8
VCE = VGE
ICE = 1mA
1.6
1.4
1.2
1.0
0.8
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Threshold Voltage vs. Junction
Temperature
12
ICE = 6.5A, VGE = 5V, RG = 1KΩ
10
8
Inductive tOFF
6
4
2 Resistive tON
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 12. Switching Time vs. Junction
Temperature
@2014 Fairchild Semiconductor Corporation
FGB3245G2_F085 / FGB3245G2_F085 Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGD3245G2_F085.PDF ] | |
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