FGB3440G2_F085 반도체 회로 부품 판매점

N-Channel Ignition IGBT



Fairchild Semiconductor 로고
Fairchild Semiconductor
FGB3440G2_F085 데이터시트, 핀배열, 회로
May 2014
FGB3440G2_F085 / FGD3440G2_F085
FGP3440G2_F085
EcoSPARK®2 335mJ, 400V, N-Channel Ignition IGBT
Features
„ SCIS Energy = 335mJ at TJ = 25oC
„ Logic Level Gate Drive
Applications
„ Automotive lgnition Coil Driver Circuits
„ Coil On Plug Applications
„ Qualified to AEC Q101
„ RoHS Compliant
Package
JEDEC TO-263AB
D²-Pak
JEDEC TO-220AB
EC
G
Symbol
G
E
JEDEC TO-252AA
D-Pak
GATE
G
COLLECTOR
E (FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BVCER Collector to Emitter Breakdown Voltage (IC = 1mA)
BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA)
ESCIS25 Self Clamping Inductive Switching Energy (Note 1)
ESCIS150 Self Clamping Inductive Switching Energy (Note 2)
IC25 Collector Current Continuous, at VGE = 4.0V, TC = 25°C
IC110
Collector Current Continuous, at VGE = 4.0V, TC = 110°C
VGEM Gate to Emitter Voltage Continuous
PD
Power Dissipation Total, at TC = 25°C
Power Dissipation Derating, for TC > 25oC
TJ Operating Junction Temperature Range
TSTG Storage Junction Temperature Range
TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
TPKG Max. Lead Temp. for Soldering (Package Body for 10s)
ESD Electrostatic Discharge Voltage at100pF, 1500Ω
@2014 Fairchild Semiconductor Corporation
1
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
COLLECTOR
R1
R2
EMITTER
Ratings
400
28
335
195
26.9
25
±10
166
1.1
-40 to +175
-40 to +175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/oC
oC
oC
oC
oC
kV
www.fairchildsemi.com

FGB3440G2_F085 데이터시트, 핀배열, 회로
Package Marking and Ordering Information
Device Marking
FGB3440G2
FGD3440G2
FGP3440G2
Device
FGB3440G2_F085
FGD3440G2_F085
FGP3440G2_F085
Package
TO-263AB
TO-252AA
TO-220AB
Reel Size
330mm
330mm
Tube
Tape Width
24mm
16mm
N/A
Quantity
800
2500
50
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off State Characteristics
BVCER
BVCES
BVECS
BVGES
ICER
ICE = 2mA, VGE = 0,
Collector to Emitter Breakdown Voltage
RGE
TJ =
= 1KΩ,
-40 to 150oC
ICE = 10mA, VGE = 0V,
Collector to Emitter Breakdown Voltage
RGE
TJ =
= 0,
-40 to
150oC
Emitter to Collector Breakdown Voltage
ICE = -20mA, VGE = 0V,
TJ = 25°C
Gate to Emitter Breakdown Voltage IGES = ±2mA
Collector to Emitter Leakage Current VCE = 250V, RGE=1K
IECS Emitter to Collector Leakage Current VEC = 24V,
R1 Series Gate Resistance
R2 Gate to Emitter Resistance
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage
VCE(SAT) Collector to Emitter Saturation Voltage
VCE(SAT) Collector to Emitter Saturation Voltage
ESCIS Self Clamped Inductive Switching
ICE = 6A, VGE = 4V,
ICE = 10A, VGE = 4.5V,
ICE = 15A, VGE = 4.5V,
L = 3.0 mHy, VGE = 5V
RG = 1K, (Note 1)
TJ = 25oC
TJ = 150oC
TJ = 25oC
TJ = 150oC
TJ = 25oC
TJ = 150oC
TJ = 150oC
TJ = 25oC
Min Typ Max Units
370 400 430 V
390 420 450 V
28 - - V
±12 ±14 -
V
- - 25 μA
- - 1 mA
-
-
-
-
1
40
mA
- 120 -
Ω
10K - 30K Ω
- 1.1 1.2 V
- 1.3 1.45 V
- 1.6 1.75 V
- - 335 mJ
Notes:
1: Self
TJ=25
oCCla; mL=p3inmgHInyd, uIScCtiIvSe=1S5wAit,cVhCiCn=g1E0n0eVrgdyu(rEinSgCIiSn2d5u) cotfo3r 3c5hmarJgiinsgbaanseddVoCnC=th0eVtedsutricnogntdhietiotnimsethinatcilsasmtaprtin. g
2T:J=S1e5lf0ColaCm; Lp=in3gmInHdyu, cIStiCvIeS=S1w1it.c4hAi,nVgCECn=e1r0g0yV(EdSuCriInSg15i0n)doufc1to9r5cmhJairsgibnagsaenddonVCthCe=0teVstdcuornindgititohnestitmhaet
is
in
starting
clamp.
@2014 Fairchild Semiconductor Corporation
2
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
www.fairchildsemi.com




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FGB3440G2_F085 igbt

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FGB3440G2_F085

N-Channel Ignition IGBT - Fairchild Semiconductor