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ON Semiconductor |
NGTB40N60FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.
Features
• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Solar Inverters
• Uninterruptable Power Supply (UPS)
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES 600 V
IC
A
80
40
Pulsed collector current, Tpulse
limited by TJmax
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
Diode Pulsed Current
Tpulse Limited by TJmax
Short−circuit withstand time
VGE = 15 V, VCE = 300 V,
TJ ≤ +150°C
Gate−emitter voltage
Transient Gate Emitter Voltage
(tp = 5 ms, D < 0.010)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
ICM 160 A
IF
A
80
40
IFM 160 A
tSC 5 ms
VGE
$20
V
$30
PD W
257
102
Operating junction temperature
range
TJ −55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
40 A, 600 V
VCEsat = 1.85 V
C
G
E
G
C
E
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
40N60FL
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB40N60FLWG
Package
TO−247
(Pb−Free)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2013
July, 2013 − Rev. 0
1
Publication Order Number:
NGTB40N60FLW/D
NGTB40N60FLWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
Symbol
RqJC
RqJC
RqJA
Value
0.470
1.06
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
V(BR)CES
600
−
−
V
Collector−emitter saturation voltage
VGE
=V1G5EV=, I1C5=V4,0ICA=,
40 A
TJ = 150°C
VCEsat
1.6 1.85 2.1
− 2.3 −
V
Gate−emitter threshold voltage
VGE = VCE, IC = 200 mA
VGE(th) 4.5 5.5 6.5
V
Collector−emitter cut−off current, gate−
VGE = 0 V, VCE = 600 V
ICES − − 0.2 mA
emitter short−circuited
VGE = 0 V, VCE = 600 V, TJ = 150°C
−−2
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES − − 100 nA
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 20 V, VGE = 0 V, f = 1 MHz
VCE = 480 V, IC = 40 A, VGE = 15 V
Cies
Coes
Cres
Qg
Qge
Qgc
− 4200 −
− 170 −
− 110 −
− 171 −
− 36 −
− 83 −
pF
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
TJ = 25°C
VCC = 400 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15 V
TJ = 150°C
VCC = 400 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15 V
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
− 85 −
− 37 −
− 174 −
− 73 −
− 0.89 −
− 0.44 −
− 1.33 −
− 82 −
− 38 −
− 179 −
− 95 −
− 1.10 −
− 0.84 −
− 1.94 −
ns
mJ
ns
mJ
http://onsemi.com
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