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Renesas 로고
Renesas
RJH65T46DPQ-A0 데이터시트, 핀배열, 회로
Preliminary Datasheet
RJH65T46DPQ-A0
650V - 40A - IGBT
Application: Power Factor Correction circuit
R07DS1259EJ0100
Rev.1.00
May 18, 2015
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology (G7H series)
High speed switching
tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 40 A, Rg = 10 , Ta = 25°CInductive load)
Operation frequency (20kHz f ˂ 100kHz)
Not guarantee short circuit withstand time
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
1. Gate
G
2. Collector
3. Emitter
4. Collector
E
Absolute Maximum Ratings
(Tc = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode Tc = 25 °C
Forward current
Tc = 100 °C
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
VCES / VR
VGES
IC
IC
iC(peak) Note1
IDF
IDF
iDF(peak) Note1
PC
j-c
650
30
80
40
300
30
15
100
340.9
0.44
V
V
A
A
A
A
A
A
W
°C/W
Junction to case thermal resistance (Diode)
Junction temperature
j-cd
Tj Note2
1.33 °C/ W
175 °C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW 10 s, duty cycle 1%
2. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Page 1 of 9


RJH65T46DPQ-A0 데이터시트, 핀배열, 회로
RJH65T46DPQ-A0
Preliminary
Electrical Characteristics
Item
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on loss energy
Turn-off loss energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on loss energy
Turn-off loss energy
Total switching energy
Symbol
ICES / IR
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
Min
4.0
Typ
1.8
3000
92
55
138
22
57
45
30
170
45
0.45
0.55
1.00
45
30
185
50
0.57
0.63
1.20
Max
100
±1
7.0
2.4
FRD forward voltage
VF — 1.7
FRD reverse recovery time
trr — 100
Notes: 3. Pulse test
4. Switching time test circuit and waveform are shown below.
2.2
Unit
A
(Ta = 25°C)
Test Conditions
VCE = 650 V, VGE = 0
A VGE = ±30 V, VCE = 0
V VCE = 10V, IC = 1.33 mA
V IC = 40 A, VGE = 15V Note3
pF VCE = 25 V
pF VGE = 0
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 400 V
nC IC = 40 A
ns VCC = 400 V
ns VGE = 15 V
ns IC = 40 A
ns Rg = 10
mJ
TC = 25 °C
Inductive load Note4
mJ
mJ
ns VCC = 400 V
ns VGE = 15 V
ns IC = 40 A
ns Rg = 10
mJ
TC = 150 °C
Inductive load Note4
mJ
mJ
V IF = 15 A Note3
ns IF = 15 A, diF/dt = 300 A/s
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Page 2 of 9




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