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PDF QIC6508001 Data sheet ( Hoja de datos )
| Número de pieza | QIC6508001 | |
| Descripción | Dual Common Emitter HVIGBT Module | |
| Fabricantes | Powerex Power Semiconductors | |
| Logotipo |  |
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QIC6508001 Preliminary
Dual Common Emitter
HVIGBT Module
85 Amperes/6500 Volts
S NUTS
(3TYP)
A
D
FF
J (2TYP)
C
BE
1 23
H
M
H
G (3TYP)
T (SCREWING
DEPTH)
R (DEEP)
K
(3TYP)
L
(2TYP)
V (4TYP)
U (5TYP)
P
Q
N
(NC) 4
5
6
7
8
1
2
3
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A
5.51 140.0
B
2.87
73.0
C
1.89
48.0
D 4.88±0.01 124.0±0.25
E 2.24±0.01 57.0±0.25
F
1.18
30.0
G
0.43
11.0
H
1.07
27.15
J
0.20
5.0
K
1.65
42.0
Dimensions Inches Millimeters
L 0.69±0.01 17.5±0.25
M
0.38
9.75
N
0.20
5.0
P
0.22
5.5
Q
1.44
36.5
R
0.16
4.0
S
M6 Metric
M6
T
0.63 Min. 16.0 Min.
U
0.11 x 0.02 2.8 x 0.5
V
0.28 Dia.
7.0 Dia.
Description:
Powerex HVIGBTs feature highly
insulating housings that offer
enhanced protection by means of
greater creepage and strike clear-
ance distance for many demanding
applications like medium voltage
drives and auxiliary traction
applications.
Features:
-40 to 150°C Extended
Temperature Range
100% Dynamic Tested
100% Partial Discharge Tested
Advanced Mitsubishi R-Series
Chip Technology
Aluminum Nitride (AlN) Ceramic
Substrate for Low Thermal
Impedance
Complementary Line-up in
Expanding Current Ranges to
Mitsubishi HVIGBT Power
Modules
Copper Baseplate
Creepage and Clearance Meet
IEC 60077-1
Rugged SWSOA and RRSOA
Applications:
High Voltage Power Supplies
Medium Voltage Drives
Motor Drives
Traction
11/14 Rev. 3
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
1
1 page  
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QIC6508001
Dual Common Emitter HVIGBT Module
85 Amperes/6500 Volts
Preliminary
CAPACITANCE CHARACTERISTICS
(TYPICAL)
100
Cies
10
1.0 Coes
VGE = 0V
Tj = 25°C
f = 100kHz
Cres
0.1
0.1 1.0 10 100
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
HALF-BRIDGE SWITCHING
ENERGY CHARACTERISTICS
(TYPICAL)
1.4
VCC = 3600V, VGE = ±15V,
1.2 RG(on) = 30Ω, RG(off) = 300Ω,
LS = 150nH, Tj = 125°C
1.0 Inductive Load
Eon
0.8 Eoff
Erec
0.6
0.4
0.2
0
0 25 50 75 100 125 150
COLLECTOR CURRENT, IC, (AMPERES)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCE = 3600V
15 IC = 85A
Tj = 25°C
10
5
0
-5
-10
-15
0
0.2 0.4 0.6 0.8 1.0
GATE CHARGE, QG, (μC)
HALF-BRIDGE SWITCHING
ENERGY CHARACTERISTICS
(TYPICAL)
1.2
VCC = 3600V, IC = 85A,
1.0
VGE = ±15V, LS = 150nH,
Tj = 125°C, Inductive Load
0.8
Eon
Erec
0.6
1.2
0.4
0.2
0
0
20 40 60 80
GATE RESISTOR, RG, (Ohm)
100
11/14 Rev. 3
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet QIC6508001.PDF ] | |
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