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Número de pieza | RJH60D3DPP-M0 | |
Descripción | IGBT | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RJH60D3DPP-M0 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! Preliminary Datasheet
RJH60D3DPP-M0
600V - 17A - IGBT
Application: Inverter
R07DS0162EJ0400
Rev.4.00
Apr 19, 2012
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 17 A, Rg = 5 , Ta = 25°C)
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
C
1
23
1. Gate
2. Collector
G 3. Emitter
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
iDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
35
17
70
17
70
40
3.15
4.9
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0162EJ0400 Rev.4.00
Apr 19, 2012
Page 1 of 9
1 page RJH60D3DPP-M0
Switching Characteristics (Typical) (1)
1000
tf
100 td(off)
td(on)
10 tr
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
1
1 10
Collector Current IC (A)
(Inductive load)
100
Switching Characteristics (Typical) (3)
1000
VCC = 300 V, VGE = 15 V
IC = 17 A, Tc = 150°C
tf
100 td(off)
td(on)
tr
10
1 10
100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
VCC = 300 V, VGE = 15 V
IC = 17 A, Rg = 5 Ω
tf
100
td(off)
td(on)
tr
10
25 50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
10
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
1
0.1 Eoff
0.01
1
Eon
10
Collector Current IC (A)
(Inductive load)
100
Switching Characteristics (Typical) (4)
1
Eoff
Eon
0.1
0.01
1
VCC = 300 V, VGE = 15 V
IC = 17 A, Tc = 25°C
10 100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
1
Eoff
Eon
0.1
VCC = 300 V, VGE = 15 V
IC =17 A, Rg = 5 Ω
0.01
25 50 75 100
125
150
Case Temperature Tc (°C)
(Inductive load)
R07DS0162EJ0400 Rev.4.00
Apr 19, 2012
Page 5 of 9
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet RJH60D3DPP-M0.PDF ] |
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