L74VHC1GT01 반도체 회로 부품 판매점
2-Input NAND Gate with Open Drain Output
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 LRC |
LESHAN RADIO COMPANY, LTD.
2–Input NAND Gate with Open Drain Output
with LSTTL–Compatible Inputs
L74VHC1GT01
The L74VHC1GT01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate
CMOS technology. It achieves high speed peration similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including an open drain output which provides the ability to set output switching level.
This allows the L74VHC1GT01 to be used to interface 5 V circuits to circuits of any voltage between V CC and 7 V using an external
resistor and power supply.
The device input is compatible with TTL–type input thresholds and the output has a full 5.0 V CMOS level output swing. The input
protection circuitry on this device allows overvoltage tolerance on the input, allowing the device to be used as a logic–level translator from
3.0 V CMOS logic to 5.0 V CMOS Logic or from 1.8 V CMOS logic to 3.0 V CMOS Logic while operating at the high–voltage power
supply.
The L74VHC1GT01 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This
allows the L74VHC1GT01 to be used to interface 5 V circuits to 3 V circuits. The output structures also provide protection when
V CC = 0 V. These input and output structures help prevent device destruction caused by supply voltage – input/output voltage mismatch,
battery backup, hot insertion, etc.
• High Speed: t PD = 3.7 ns (Typ) at V CC = 5 V
• Low Internal Power Dissipation: I CC = 2 mA (Max) at T A = 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 16
MARKING DIAGRAMS
5
4
1
2
3
SC–88A / SOT–353/SC–70
DF SUFFIX
5
4
V0d
Pin 1
d = Date Code
Figure 1. Pinout (Top View)
1
2
3
TSOP–5/SOT–23/SC–59
DT SUFFIX
PIN ASSIGNMENT
1 IN B
2 IN A
3 GND
4 OUT Y
5 V CC
V0d
Figure 2. Logic Symbol
Pin 1
d = Date Code
FUNCTION TABLE
Inputs
A
L
L
H
H
B
L
H
L
H
Output
Y
Z
Z
Z
L
www.DataSheet4U.com
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 5 of this data sheet.
1/6
LESHAN RADIO COMPANY, LTD.
L74VHC1GT01
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CC
V IN
V OUT
I IK
I OK
I OUT
I CC
PD
θ JA
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Sink Current
DC Supply Current per Supply Pin
Power dissipation in still air
Thermal resistance
V < GND; V > V
OUT
OUT
CC
SC–88A, TSOP–5
SC–88A, TSOP–5
– 0.5 to + 7.0
– 0.5 to 7.0
– 0.5 to 7.0
–20
+20
+ 25
+50
200
333
V
V
V
mA
mA
mA
mA
mW
°C/W
T L Lead Temperature, 1 mm from Case for 10 Seconds
T J Junction Temperature Under Bias
260
+ 150
°C
°C
T stg
V ESD
Storage temperature
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
–65 to +150
>2000
> 200
°C
V
Charged Device Model (Note 4)
N/A
I LATCH–UP
Latch–Up Performance Above V CC and Below GND at 125°C (Note 5)
± 500
mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V CC DC Supply Voltage
V IN DC Input Voltage
V OUT
DC Output Voltage
T A Operating Temperature Range
t r ,t f
Input Rise and Fall Time
V CC = 3.3 ± 0.3 V
V CC = 5.0 ± 0.5 V
Min Max Unit
2.0 5.5 V
0.0 5.5 V
0.0 7.0 V
– 55
+ 125
°C
0 100 ns/V
0 20
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Time,
Time,
Temperature °C
Hours
Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
1 10 100 1000
TIME, YEARS
Figure 3. Failure Rate vs. Time
Junction Temperature
2/6
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L74VHC1GT01 gate
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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