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Philips |
INTEGRATED CIRCUITS
DATA SHEET
74HC2G32; 74HCT2G32
Dual 2-input OR gate
Product specification
Supersedes data of 2002 Jul 17
2003 Oct 30
Philips Semiconductors
Dual 2-input OR gate
Product specification
74HC2G32; 74HCT2G32
FEATURES
• Wide supply voltage range from 2.0 to 6.0 V
• Symmetrical output impedance
• High noise immunity
• Low power dissipation
• Balanced propagation delays
• Very small 8 pins package
• Output capability: standard
• ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
DESCRIPTION
The 74HC2G/HCT2G32 is a high-speed Si-gate CMOS
device.
The 74HC2G/HCT2G32 provides the dual 2-input OR
function.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.
SYMBOL
PARAMETER
CONDITIONS
tPHL/tPLH
CI
CPD
propagation delay nA, nB to nY
CL = 50 pF; VCC = 4.5 V
input capacitance
power dissipation capacitance per gate notes 1 and 2
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
∑ (CL × VCC2 × fo) = sum of outputs.
2. For 74HC2G32: the condition is VI = GND to VCC.
For 74HCT2G32: the condition is VI = GND to VCC − 1.5 V.
TYPICAL
HC2G32 HCT2G32
UNIT
9 13 ns
1.5 1.5 pF
10 11 pF
2003 Oct 30
2
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