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Philips |
INTEGRATED CIRCUITS
DATA SHEET
74HC1G00; 74HCT1G00
2-input NAND gate
Product specification
File under Integrated Circuits, IC06
1998 Jul 30
Philips Semiconductors
2-input NAND gate
Product specification
74HC1G00;
74HCT1G00
FEATURES
• Wide operating voltage:
2.0 to 6.0 V
• Symmetrical output impedance
• High noise immunity
• Low power dissipation
• Balanced propagation delays
• Very small 5 pins package
• Output capability: standard.
DESCRIPTION
The 74HC1G/HCT1G00 is a high
speed Si-gate CMOS device.
The 74HC1G/HCT1G00 provides the
2-input NAND function. The standard
output currents are 1⁄2 compared to
the 74HC/HCT00.
FUNCTION TABLE
See note 1.
INPUTS
inA inB
LL
LH
HL
HH
OUTPUT
outY
H
H
H
L
Note
1. H = HIGH voltage level;
L = LOW voltage level.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns
SYMBOL
PARAMETER
TYPICAL
CONDITIONS
UNIT
HC1G HCT1G
tPHL/tPLH
CI
CPD
propagation
delay
inA, inB to outY
input
capacitance
power
dissipation
capacitance
CL = 15 pF;
VCC = 5 V
notes 1 and 2
7
1.5
19
10
1.5
21
ns
pF
pF
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
∑ (CL × VCC2 × fo) = sum of outputs.
2. For HC1G the condition is VI = GND to VCC.
For HCT1G the condition is VI = GND to VCC − 1.5 V.
PINNING
PIN
1
2
3
4
5
SYMBOL
inB
inA
GND
outY
VCC
DESCRIPTION
data input B
data input A
ground (0 V)
data output
DC supply voltage
1998 Jul 30
2
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