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NE25139T1U72 반도체 회로 부품 판매점

GENERAL PURPOSE DUAL-GATE GaAS MESFET



NEC 로고
NEC
NE25139T1U72 데이터시트, 핀배열, 회로
GENERAL PURPOSE
DUAL-GATE GaAS MESFET
NE25139
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN
UHF TUNER
• LOW CRSS: 0.02 pF (TYP)
• HIGH GPS: 20 dB (TYP) AT 900 MHz
• LOW NF: 1.1 dB TYP AT 900 MHz
• LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm
• ION IMPLANTATION
• AVAILABLE IN TAPE & REEL OR BULK
DESCRIPTION
The NE251 is a dual gate GaAs FET designed to provide
flexibility in its application as a mixer, AGC amplifier, or low
noise amplifier. As an example, by shorting the second gate
to the source, higher gain can be realized than with single gate
MESFETs. This device is available in a mini-mold (surface
mount) package.
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
GPS
20 10
VG2S = 1 V
VG2S = 0.5 V
VG2S = 2 V
ID = 10 mA
10 5
f = 900 MHz
NF
0
0
5 10
Drain to Source Voltage, VDS (V)
0
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOL
NF
GPS
BVDSX
IDSS
VG1S (OFF)
VG2S (OFF)
IG1SS
IG2SS
|YFS|
CISS
CRSS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 900 MHz
Power Gain at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 900 MHz
Drain to Source Breakdown Voltage at VG1S = -4 V,
VG2S = 0, ID = 10 µA
Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V
Gate 1 to Source Cutoff Voltage at VDS = 5 V,
VG2S = 0 V, ID = 100 µA
Gate 2 to Source Cutoff Voltage at VDS = 5 V,
VG1S = 0 V, ID = 100 µA
Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0
Gate 2 Reverse Current at VDS = 0, VG2S = -4V, VG1S = 0
Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 1.0 kHz
Input Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 1 MHz
Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 1 MHz
UNITS
dB
dB
V
mA
V
V
µA
µA
mS
pF
pF
MIN
16
13
5
-3.5
-3.5
18
0.5
NE25139
39
TYP
MAX
1.1 2.5
20
20 40
10
10
25 35
1.0 1.5
0.02 0.03
California Eastern Laboratories


NE25139T1U72 데이터시트, 핀배열, 회로
NE25139
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS Drain to Source Voltage V
13
VG1S
Gate 1 to Source Voltage V
-4.5
VG2S
Gate 2 to Source Voltage
V
-4.5
ID Drain Current
mA IDSS
PT Total Power Dissipation mW
TCH Channel Temperature
°C
200
125
TSTG
Storage Temperature
°C -55 to +125
Note:
1. Operation in excess of anyone of these parameters may result
in permanent damage.
TYPICAL NOISE PARAMETERS (TA = 25°C)
(VDS = 5 V, VG2S = 0 V, IDS = 10 mA)
FREQ.
(GHz)
0.5
0.9
1.5
2.0
3.0
4.0
NFOPT
(dB)
0.9
1.2
1.5
1.9
2.5
3.3
GA
(dB)
18.5
16.0
14.6
12.5
11.0
9.5
ΓOPT
MAG ANG
0.9 18
0.82 28
0.71 45
0.55 75
0.34 116
0.25 154
Rn/50
1.9
1.2
0.9
0.67
0.5
0.4
TYPICAL PERFORMANCE CURVES (TA = 25 °C)
TOTAL POWER DISSIPATION VS.
AMBIENT TEMPERATURE
250
200
FREE AIR
150
100
50
0
0
25 50
75 100 125
Ambient Temperature, TA (°C)
FORWARD TRANSFER ADMITTANCE vs.
GATE 1 TO SOURCE VOLTAGE
30
VDS = 5V
f = 1kHz
20
VG2S = 1.0
10
0.5 V
-0.5 V
0V
0
-2.0 -1.0
0 +1.0
Gate 1 to Source Voltage, VG1S (V)
DRAIN CURRENT vs.
GATE 1 TO SOURCE VOLTAGE
30
VDS = 5V
VG2S = 1.0V
20
0.5 V
10 0 V
-0.5 V
0
-2.0 -1.0
0
Gate 1 to Source Voltage, VG1S (V)
+1.0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
30
VDS = 5 V
f = 1 kHz
VG2S = 1.0 V
20
10
0
0
VG2S = 0.5 V
10 20
Drain Current, ID (mA)
30




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