74LVC2G32DC 반도체 회로 부품 판매점

Dual 2-input OR gate



NXP Semiconductors 로고
NXP Semiconductors
74LVC2G32DC 데이터시트, 핀배열, 회로
INTEGRATED CIRCUITS
DATA SHEET
74LVC2G32
Dual 2-input OR gate
Product specification
Supersedes data of 2003 Oct 27
2004 Sep 22

74LVC2G32DC 데이터시트, 핀배열, 회로
Philips Semiconductors
Dual 2-input OR gate
Product specification
74LVC2G32
FEATURES
Wide supply voltage range from 1.65 V to 5.5 V
5 V tolerant outputs in the Power-down mode
High noise immunity
Complies with JEDEC standard:
– JESD8-7 (1.65 V to 1.95 V)
– JESD8-5 (2.3 V to 2.7 V)
– JESD8B/JESD36 (2.7 V to 3.6 V).
• ±24 mA output drive (VCC = 3.0 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Inputs accept voltages up to 5 V
Multiple package options
ESD protection:
– HBM EIA/JESD22-A114-B exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V.
Specified from 40 °C to +85 °C and 40 °C to +125 °C.
DESCRIPTION
The 74LVC2G32 is a high-performance, low-power,
low-voltage, Si-gate CMOS device and superior to most
advanced CMOS compatible TTL families.
Inputs can be driven from either 3.3 V or 5 V devices. This
feature allows the use of these devices as translators in a
mixed 3.3 V and 5 V environment.
This device is fully specified for partial power-down
applications using Ioff. The Ioff circuitry disables the output,
preventing the damaging backflow current through the
device when it is powered down.
The 74LVC2G32 provides the 2-input OR gate.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf 2.5 ns.
SYMBOL
tPHL/tPLH
CI
CPD
PARAMETER
propagation delay
inputs nA, nB to output nY
input capacitance
power dissipation capacitance per gate
CONDITIONS
TYPICAL UNIT
VCC = 1.8 V; CL = 30 pF; RL = 1 k
VCC = 2.5 V; CL = 30 pF; RL = 500
VCC = 2.7 V; CL = 50 pF; RL = 500
VCC = 3.3 V; CL = 50 pF; RL = 500
VCC = 5.0 V; CL = 50 pF; RL = 500
3.9
2.4
2.7
2.2
1.7
2.5
ns
ns
ns
ns
ns
pF
VCC = 3.3 V; notes 1 and 2
14 pF
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
Σ(CL × VCC2 × fo) = sum of the outputs.
2. The condition is VI = GND to VCC.
2004 Sep 22
2




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74LVC2G32DC gate

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