74HCT2G86DC 반도체 회로 부품 판매점
Dual 2-input exclusive-OR gate
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 Philips |
INTEGRATED CIRCUITS
DATA SHEET
74HC2G86; 74HCT2G86
Dual 2-input exclusive-OR gate
Product specification
Supersedes data of 2002 Jul 17
2003 Jul 28
Philips Semiconductors
Dual 2-input exclusive-OR gate
Product specification
74HC2G86; 74HCT2G86
FEATURES
• Wide supply voltage range from 2.0 to 6.0 V
• Symmetrical output impedance
• High noise immunity
• Low power dissipation
• Balanced propagation delays
• Very small 8 pins package
• ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
DESCRIPTION
The 74HC2G/HCT2G86 is a high-speed Si-gate CMOS
device.
The 74HC2G/HCT2G86 provides dual 2-input
exclusive-OR gate.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.
SYMBOL
PARAMETER
CONDITIONS
tPHL/tPLH
CI
CPD
propagation delay nA to nY
input capacitance
power dissipation capacitance per gate
CL = 50 pF; VCC = 4.5 V
notes 1 and 2
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total switching outputs;
∑ (CL × VCC2 × fo) = sum of outputs.
2. For 74HC2G86 the condition is VI = GND to VCC.
For 74HCT2G86 the condition is VI = GND to VCC − 1.5 V.
TYPICAL
HC2G86 HCT2G86
UNIT
11 11 ns
1.5 1.5 pF
10 9
pF
2003 Jul 28
2
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74HCT2G86DC gate
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국내 전력반도체 판매점
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관련 데이터시트
74HCT2G86DC
Dual 2-input exclusive-OR gate - Philips
74HCT2G86DP
Dual 2-input exclusive-OR gate - Philips