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74HCT2G08DP 반도체 회로 부품 판매점

Dual 2-input AND gate



Philips 로고
Philips
74HCT2G08DP 데이터시트, 핀배열, 회로
INTEGRATED CIRCUITS
DATA SHEET
74HC2G08; 74HCT2G08
Dual 2-input AND gate
Product specification
Supersedes data of 2003 Feb 03
2003 Oct 22


74HCT2G08DP 데이터시트, 핀배열, 회로
Philips Semiconductors
Dual 2-input AND gate
Product specification
74HC2G08; 74HCT2G08
FEATURES
Wide supply voltage range from 2.0 to 6.0 V
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
Very small 8 pins package
Output capability is standard
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
Specified from 40 to +85 °C and 40 to +125 °C.
DESCRIPTION
The 74HC2G/HCT2G08 is a high-speed Si-gate CMOS
device.
The 74HC2G/HCT2G08 provides the 2-input AND
function.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf 6.0 ns.
SYMBOL
PARAMETER
CONDITIONS
tPHL/tPLH
CI
CPD
propagation delay nA, nB to nY
CL = 15 pF; VCC = 5 V
input capacitance
power dissipation capacitance per gate notes 1 and 2
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
(CL × VCC2 × fo) = sum of outputs.
2. For 74HC2G08 the condition is VI = GND to VCC.
For 74HCT2G08 the condition is VI = GND to VCC 1.5 V.
TYPICAL
HC2G08 HCT2G08
UNIT
9 14 ns
1.5 1.5 pF
10 10 pF
2003 Oct 22
2




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74HCT2G08DP gate

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