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Seme LAB |
TetraFET
D2081UK
MECHANICAL DATA
Dimensions in mm.
0 .3 2
0 .2 4
16˚
m ax.
0 .1 0
0 .0 2
13˚
1 .7 0
m ax.
10˚
m ax.
6 .7
6 .3
3 .1
2 .9
4
3 .7 7 .3
3 .3 6 .7
123
1 .0 5
0 .8 5
PIN 1
PIN 3
GATE
SOURCE
2 .3 0
4 .6 0
0 .8 0
0 .6 0
SOT–223
PIN 2
PIN 4
DRAIN
DRAIN
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
750mW – 12V – 1GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE (Typical < 2dB NF)
• HIGH GAIN – 11dB MINIMUM
• SURFACE MOUNT
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from DC to 2.5 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
2W
BVDSS
Drain – Source Breakdown Voltage
65V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
200mA
Tstg Storage Temperature
–65 to 125°C
Tj Maximum Operating Junction Temperature
150°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 2811
Issue 1
D2081UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
VGS = 0
|D = 10mA
65
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 750mW
VDS = 12V
f = 1GHz
VDS = 0
VDS = VGS
ID = 0.2A
IDQ = 75mA
1
0.18
11
40
10:1
Ciss Input Capacitance
VDS = 0V VGS = –5V f = 1MHz
Coss Output Capacitance
VDS = 28V VGS = 0 f = 1MHz
Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Typ.
Max. Unit
V
1 mA
1 µA
7V
mhos
dB
%
—
12
6 pF
0.5
Max. 70°C / W
Freq
MHz
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
S Parameters at Vd = 12V, Id = 75mA
S11 S12 S21
mag ang mag ang mag ang
0.47 -95 0.04
50 5.20
90
0.46 -120 0.05
80 4.40
76
0.47 -131 0.07 100 3.50
68
0.49 -146 0.10 110 3.00
59
0.51 -156 0.15 110 2.60
51
0.53 -163 0.20 104 2.30
45
0.54 -180 0.25 100 2.10
40
0.55 178 0.29
96 1.80
36
0.56 175 0.34
91 1.60
33
0.57 163 0.40
85 1.40
28
0.58 150 0.45
80 1.30
26
0.60 144 0.48
75 1.20
24
0.60 140 0.52
70 1.10
22
0.59 130 0.55
66 1.00
21
0.58 123 0.58
63 0.95
20
0.56 115 0.60
58 0.90
19
0.54 110 0.62
54 0.90
20
0.51 108 0.62
50 0.90
20
S22
mag ang
0.32 -90
0.35 -91
0.38 -94
0.43 -98
0.48 -103
0.54 -108
0.58 -112
0.60 -116
0.63 -120
0.65 -126
0.66 -129
0.66 -133
0.66 -135
0.65 -138
0.65 -140
0.64 -142
0.64 -144
0.63 -145
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 2811
Issue 1
|