파트넘버.co.kr D2020UK 데이터시트 PDF


D2020UK 반도체 회로 부품 판매점

METAL GATE RF SILICON FET



Seme LAB 로고
Seme LAB
D2020UK 데이터시트, 핀배열, 회로
MEwCDwHAwN87 .ICDAaLtDaAASThAee12t4U.com N
CB
P
TetraFET
D2020UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
63
5W – 28V – 1GHz5 4
SINGLE ENoDmEDH
.cK
UL
t4J
M
E
FG
eSO8 PACKAGE
ePIN 1 – SOURCE
PIN 2 – DRAIN
hPIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
taSDim.
A
B
aC
D
E
.DF
G
H
wJ
wK
wL
mm
4.06
5.08
1.27
0.51
3.56
4.06
1.65
0.76
0.51
1.02
45°
Tol.
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
+0.25
-0.00
Min.
Max.
Max.
Min.
Max.
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
0.030
0.020
0.040
45°
Tol.
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
+0.010
-0.000
Min.
Max.
Max.
Min.
Max.
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
M 0.20 ±0.08 0.008 ±0.003
mN 2.18
Max. 0.086
Max.
oP 4.57 ±0.08 0.180 ±0.003
t4U.cABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
ePD Power Dissipation
30W
heBVDSS
Drain – Source Breakdown Voltage *
65V
taSBVGSS
Gate – Source Breakdown Voltage*
±20V
aID(sat)
Drain Current
2A
.DTstg Storage Temperature
–65 to 150°C
wTj Maximum Operating Junction Temperature
200°C
wwSemelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95


D2020UK 데이터시트, 핀배열, 회로
D2020UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
VGS = 0
ID = 10mA
65
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 5W
VDS = 28V
f = 1GHz
VDS = 0
VDS = VGS
ID = 0.4A
IDQ = 0.4A
1
0.36
13
40
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 0V
VDS = 28V
VDS = 28V
VGS = –5V f = 1MHz
VGS = 0 f = 1MHz
VGS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
Typ.
Max. Unit
V
2 mA
1 µA
5V
S
dB
%
24 pF
12 pF
1 pF
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 6°C / W
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95




PDF 파일 내의 페이지 : 총 2 페이지

제조업체: Seme LAB

( semelab )

D2020UK gate

데이터시트 다운로드
:

[ D2020UK.PDF ]

[ D2020UK 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


D2020UK

METAL GATE RF SILICON FET - Seme LAB



D2020UK-P

METAL GATE RF SILICON FET - Seme LAB



D2020UK.01

METAL GATE RF SILICON FET - Seme LAB



D2020UK.02

METAL GATE RF SILICON FET - Seme LAB